component
PBSS4320T-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| page.json | 17d ago |
| pbss4320t-hxy-etched.glb | 17d ago |
| pbss4320t-hxy-etched.step | 17d ago |
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PBSS4320T-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
PBSS4320T-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO) and base current to 2 A. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet rates VEBO at 5 V. |
| 3 | C | passive | Collector of the NPN transistor; rated for VCEO 20 V, VCBO 20 V and IC 2.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 20 | V | Ta=25°C unless otherwise noted | 1 | ||
| Collector-Emitter Voltage | VCEO | 20 | V | Ta=25°C unless otherwise noted | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25°C unless otherwise noted | 1 | ||
| Collector Current | IC | 2.5 | A | Ta=25°C unless otherwise noted | 1 | ||
| Collector Power Dissipation | PC | 350 | mW | Ta=25°C unless otherwise noted | 1 | ||
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 20 | V | IC=100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage (note 1) | V(BR)CEO | 20 | V | IC=10mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA ,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=16V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=4V,IC=0 | 1 | ||
| DC current gain (note 1) | hFE(1) | 200 | VCE=2V, IC=10mA | 1 | |||
| DC current gain (note 1) | hFE(2) | 300 | VCE=2V, IC=0.2A | 1 | |||
| DC current gain (note 1) | hFE(4) | 100 | VCE=2V, IC=4A | 1 | |||
| Collector-emitter saturation voltage (note 1) | VCE(sat)1 | 15 | mV | IC=0.1A,IB=10mA | 1 | ||
| Collector-emitter saturation voltage (note 1) | VCE(sat)2 | 150 | mV | IC=1A,IB=10mA | 1 | ||
| Collector-emitter saturation voltage (note 1) | VCE(sat)3 | 200 | mV | IC=2A,IB=0mA | 1 | ||
| Base-emitter saturation voltage (note 1) | VBE(sat) | 1 | V | IC=2A,IB=50mA | 1 | ||
| Base-emitter on voltage (note 1) | VBE(on) | 1 | V | IC=2A, VCE=2V | 1 | ||
| Output capacitance | Cob | 30 | pF | VCB=10V, f=1MHz | 1 | ||
| Turn-on time | t(on) | 170 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA | 1 | ||
| Turn-off time | t(off) | 400 | ns | VCC=10V, IC=1A, IB1=-IB2=10mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V,IC=50mA, f=100MHz | 1 | ||
| Thermal Resistance From Junction To Ambient | RΘJA | 500 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
PBSS4320T-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pbss4320t-hxy-etched.step/pbss4320t-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4320t-hxy.step/pbss4320t-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
2986a9625e68192e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).