component
PAM8407DR
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Diodes Incorporated Audio Power OpAmps, SOIC-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PAM8407DR
Diodes Incorporated · Audio Power OpAmps · SOIC-16
PAM8407DR from Diodes Incorporated, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RINP | input | Positive input of the right channel power amplifier. |
| 2 | RINN | input | Negative input of the right channel power amplifier. |
| 3 | SD | input | Full chip shutdown control input, active low; the SD pin cannot be left floating due to the internal pull-down. |
| 4 | UP | input | Volume UP control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low. |
| 5 | DOWN | input | Volume DOWN control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low. |
| 6 | GND | power_in | Ground. |
| 7 | LINN | input | Negative input of the left channel power amplifier. |
| 8 | LINP | input | Positive input of the left channel power amplifier. |
| 9 | VDD | power_in | Power supply, 2.5 V to 6.0 V operating range. |
| 10 | LOUTP | output | Positive output of the left channel power amplifier. |
| 11 | LOUTN | output | Negative output of the left channel power amplifier. |
| 12 | GND | power_in | Ground. |
| 13 | GND | power_in | Ground. |
| 14 | ROUTN | output | Negative output of the right channel power amplifier. |
| 15 | ROUTP | output | Positive output of the right channel power amplifier. |
| 16 | VDD | power_in | Power supply, 2.5 V to 6.0 V operating range. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOIC-16 |
| Category | Amplifiers |
| Pins | 16 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage Range | VDD | 2.5 | 5.5 | V | 3 | ||
| Oscillator Frequency | fOSC | 200 | 250 | 300 | kHz | 3 | |
| Mute Current | IMUTE | 4 | 10 | mA | MUTE = VDD | 3 | |
| Shutdown Current | ISD | 1 | µA | VSD = 0V | 3 | ||
| Logic Input High | VIH | 1.4 | V | Include SD, UP, DOWN | 3 | ||
| Logic Input Low | VIL | 0.6 | V | Include SD, UP, DOWN | 3 | ||
| Supply Voltage | VDD | 2.5 | 6 | V | 3 | ||
| Operating Ambient Temperature Range | TA | -40 | 85 | °C | 3 | ||
| Junction Temperature Range | TJ | -40 | 125 | °C | 3 | ||
| Supply Voltage (absolute maximum) | VDD | 6.5 | V | @TA = +25°C | 2 | ||
| Storage Temperature | -65 | 150 | °C | 2 | |||
| Maximum Junction Temperature | 150 | °C | 2 | ||||
| Junction to Ambient Thermal Resistance | 40 | °C/W | 2 | ||||
| Quiescent Current | IQ | 8 | mA | No Load | 3 | ||
| Output Offset Voltage | VOS | 10 | mV | No Load | 3 | ||
| Drain-Source On-State Resistance (P MOSFET) | RDS(ON) | 0.3 | Ω | IDS = 0.5A | 3 | ||
| Drain-Source On-State Resistance (N MOSFET) | RDS(ON) | 0.2 | Ω | IDS = 0.5A | 3 | ||
| Output Power | PO | 1.4 | W | THD+N = 1%, f = 1kHz, RL = 8Ω | 3 | ||
| Output Power | PO | 2.4 | W | THD+N = 1%, f = 1kHz, RL = 4Ω | 3 | ||
| Total Harmonic Distortion Plus Noise | THD+N | 0.08 | % | RL = 8Ω, PO = 0.85W, f = 1KHz | 3 | ||
| Power Supply Ripple Rejection | PSRR | 70 | dB | Input AC-GND, f = 1KHz, Vpp = 200mV | 3 | ||
| Channel Separation | CS | -95 | dB | PO = 1W, f = 1KHz | 3 | ||
| Efficiency | η | 87 | % | PO = 1.1W, f = 1kHz, RL = 8Ω | 3 | ||
| Efficiency | η | 83 | % | PO = 2.4W, f = 1kHz, RL = 4Ω | 3 | ||
| Noise | Vn | 60 | μV | Input AC-GND, A-weighting | 3 | ||
| Noise | Vn | 80 | μV | Input AC-GND, No A-weighting | 3 | ||
| Signal Noise Ratio | SNR | 95 | dB | f = 20-20kHz, THD = 1% | 3 | ||
| Turn-on Time | Ton | 0.65 | S | VDD = 5V | 3 | ||
| Over Temperature Protection | OTP | 150 | °C | 3 | |||
| Over Temperature Hysteresis | OTH | 40 | °C | 3 |
CAD (KiCad official)
- Symbol:
PAM8407DR - Footprint:
Package_SO:SOIC-16_3.9x9.9mm_P1.27mm - 3D model: SOIC-16 (KiCad packages3D, STEP)
- 3D model files:
pam8407dr-etched.step/pam8407dr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pam8407dr.step/pam8407dr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (12 pp, sha256
76e2f6e7781bd933, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PAM8407DR
**Diodes Incorporated** · Audio Power OpAmps · SOIC-16
PAM8407DR from Diodes Incorporated, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RINP | input | Positive input of the right channel power amplifier. |
| 2 | RINN | input | Negative input of the right channel power amplifier. |
| 3 | SD | input | Full chip shutdown control input, active low; the SD pin cannot be left floating due to the internal pull-down. |
| 4 | UP | input | Volume UP control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low. |
| 5 | DOWN | input | Volume DOWN control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low. |
| 6 | GND | power_in | Ground. |
| 7 | LINN | input | Negative input of the left channel power amplifier. |
| 8 | LINP | input | Positive input of the left channel power amplifier. |
| 9 | VDD | power_in | Power supply, 2.5 V to 6.0 V operating range. |
| 10 | LOUTP | output | Positive output of the left channel power amplifier. |
| 11 | LOUTN | output | Negative output of the left channel power amplifier. |
| 12 | GND | power_in | Ground. |
| 13 | GND | power_in | Ground. |
| 14 | ROUTN | output | Negative output of the right channel power amplifier. |
| 15 | ROUTP | output | Positive output of the right channel power amplifier. |
| 16 | VDD | power_in | Power supply, 2.5 V to 6.0 V operating range. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOIC-16 |
| Category | Amplifiers |
| Pins | 16 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage Range | VDD | 2.5 | | 5.5 | V | | 3 |
| Oscillator Frequency | fOSC | 200 | 250 | 300 | kHz | | 3 |
| Mute Current | IMUTE | | 4 | 10 | mA | MUTE = VDD | 3 |
| Shutdown Current | ISD | | | 1 | µA | VSD = 0V | 3 |
| Logic Input High | VIH | 1.4 | | | V | Include SD, UP, DOWN | 3 |
| Logic Input Low | VIL | | | 0.6 | V | Include SD, UP, DOWN | 3 |
| Supply Voltage | VDD | 2.5 | | 6 | V | | 3 |
| Operating Ambient Temperature Range | TA | -40 | | 85 | °C | | 3 |
| Junction Temperature Range | TJ | -40 | | 125 | °C | | 3 |
| Supply Voltage (absolute maximum) | VDD | | | 6.5 | V | @TA = +25°C | 2 |
| Storage Temperature | | -65 | | 150 | °C | | 2 |
| Maximum Junction Temperature | | | | 150 | °C | | 2 |
| Junction to Ambient Thermal Resistance | | | 40 | | °C/W | | 2 |
| Quiescent Current | IQ | | 8 | | mA | No Load | 3 |
| Output Offset Voltage | VOS | | 10 | | mV | No Load | 3 |
| Drain-Source On-State Resistance (P MOSFET) | RDS(ON) | | 0.3 | | Ω | IDS = 0.5A | 3 |
| Drain-Source On-State Resistance (N MOSFET) | RDS(ON) | | 0.2 | | Ω | IDS = 0.5A | 3 |
| Output Power | PO | | 1.4 | | W | THD+N = 1%, f = 1kHz, RL = 8Ω | 3 |
| Output Power | PO | | 2.4 | | W | THD+N = 1%, f = 1kHz, RL = 4Ω | 3 |
| Total Harmonic Distortion Plus Noise | THD+N | | 0.08 | | % | RL = 8Ω, PO = 0.85W, f = 1KHz | 3 |
| Power Supply Ripple Rejection | PSRR | | 70 | | dB | Input AC-GND, f = 1KHz, Vpp = 200mV | 3 |
| Channel Separation | CS | | -95 | | dB | PO = 1W, f = 1KHz | 3 |
| Efficiency | η | | 87 | | % | PO = 1.1W, f = 1kHz, RL = 8Ω | 3 |
| Efficiency | η | | 83 | | % | PO = 2.4W, f = 1kHz, RL = 4Ω | 3 |
| Noise | Vn | | 60 | | μV | Input AC-GND, A-weighting | 3 |
| Noise | Vn | | 80 | | μV | Input AC-GND, No A-weighting | 3 |
| Signal Noise Ratio | SNR | | 95 | | dB | f = 20-20kHz, THD = 1% | 3 |
| Turn-on Time | Ton | | 0.65 | | S | VDD = 5V | 3 |
| Over Temperature Protection | OTP | | 150 | | °C | | 3 |
| Over Temperature Hysteresis | OTH | | 40 | | °C | | 3 |
## CAD (KiCad official)
- Symbol: `PAM8407DR`
- Footprint: `Package_SO:SOIC-16_3.9x9.9mm_P1.27mm`
- 3D model: SOIC-16 (KiCad packages3D, STEP)
- 3D model files: `pam8407dr-etched.step` / `pam8407dr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pam8407dr.step` / `pam8407dr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/PAM8407DR.pdf) (12 pp, sha256 `76e2f6e7781bd933`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pam8407dr-datasheet.pdf)