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PAM8407DR

Diodes Incorporated · Audio Power OpAmps · SOIC-16

PAM8407DR from Diodes Incorporated, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RINP input Positive input of the right channel power amplifier.
2 RINN input Negative input of the right channel power amplifier.
3 SD input Full chip shutdown control input, active low; the SD pin cannot be left floating due to the internal pull-down.
4 UP input Volume UP control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low.
5 DOWN input Volume DOWN control, active low; trigger points are 70% of VDD minimum for logic high and 20% of VDD maximum for logic low.
6 GND power_in Ground.
7 LINN input Negative input of the left channel power amplifier.
8 LINP input Positive input of the left channel power amplifier.
9 VDD power_in Power supply, 2.5 V to 6.0 V operating range.
10 LOUTP output Positive output of the left channel power amplifier.
11 LOUTN output Negative output of the left channel power amplifier.
12 GND power_in Ground.
13 GND power_in Ground.
14 ROUTN output Negative output of the right channel power amplifier.
15 ROUTP output Positive output of the right channel power amplifier.
16 VDD power_in Power supply, 2.5 V to 6.0 V operating range.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOIC-16
Category Amplifiers
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage Range VDD 2.5 5.5 V 3
Oscillator Frequency fOSC 200 250 300 kHz 3
Mute Current IMUTE 4 10 mA MUTE = VDD 3
Shutdown Current ISD 1 µA VSD = 0V 3
Logic Input High VIH 1.4 V Include SD, UP, DOWN 3
Logic Input Low VIL 0.6 V Include SD, UP, DOWN 3
Supply Voltage VDD 2.5 6 V 3
Operating Ambient Temperature Range TA -40 85 °C 3
Junction Temperature Range TJ -40 125 °C 3
Supply Voltage (absolute maximum) VDD 6.5 V @TA = +25°C 2
Storage Temperature -65 150 °C 2
Maximum Junction Temperature 150 °C 2
Junction to Ambient Thermal Resistance 40 °C/W 2
Quiescent Current IQ 8 mA No Load 3
Output Offset Voltage VOS 10 mV No Load 3
Drain-Source On-State Resistance (P MOSFET) RDS(ON) 0.3 Ω IDS = 0.5A 3
Drain-Source On-State Resistance (N MOSFET) RDS(ON) 0.2 Ω IDS = 0.5A 3
Output Power PO 1.4 W THD+N = 1%, f = 1kHz, RL = 8Ω 3
Output Power PO 2.4 W THD+N = 1%, f = 1kHz, RL = 4Ω 3
Total Harmonic Distortion Plus Noise THD+N 0.08 % RL = 8Ω, PO = 0.85W, f = 1KHz 3
Power Supply Ripple Rejection PSRR 70 dB Input AC-GND, f = 1KHz, Vpp = 200mV 3
Channel Separation CS -95 dB PO = 1W, f = 1KHz 3
Efficiency η 87 % PO = 1.1W, f = 1kHz, RL = 8Ω 3
Efficiency η 83 % PO = 2.4W, f = 1kHz, RL = 4Ω 3
Noise Vn 60 μV Input AC-GND, A-weighting 3
Noise Vn 80 μV Input AC-GND, No A-weighting 3
Signal Noise Ratio SNR 95 dB f = 20-20kHz, THD = 1% 3
Turn-on Time Ton 0.65 S VDD = 5V 3
Over Temperature Protection OTP 150 °C 3
Over Temperature Hysteresis OTH 40 °C 3

CAD (KiCad official)

  • Symbol: PAM8407DR
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: pam8407dr-etched.step / pam8407dr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pam8407dr.step / pam8407dr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (12 pp, sha256 76e2f6e7781bd933, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF