component
OSD7N65
Public Made by Adomby adom
OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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OSD7N65
OSEN · MOSFETs · TO-252
OSD7N65 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, absolute maximum gate-source voltage ±30 V, threshold 2.0 V to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 650 V, continuous drain current 7 A and pulsed 28 A, also connected to the tab. |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET, continuous body diode forward current 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V, VGS=0 | 2 | ||
| Forward Transconductance | gfs | 2.3 | S | VDS=15V, ID=2.0A | 2 | ||
| Turn-On Delay Time | Td(on) | 48 | 80 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 | |
| Rise Time | Tr | 135 | 170 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 | |
| Turn-Off Delay Time | Td(off) | 135 | 175 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 | |
| Fall Time | Tf | 280 | 320 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 | |
| Total Gate Charge | Qg | 30 | 65 | nC | VDS=520V, VGS=10V, ID=7A (Note 2) | 3 | |
| Input Capacitance | Ciss | 1080 | 1690 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Output Capacitance | Coss | 118 | 200 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 30 | 45 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Continuous Drain-Source Diode Forward Current | IS | 7 | A | 3 | |||
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=7A, VGS=0 | 3 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.3 | ℃/W | 3 | |||
| Drain-Source Voltage | VDSS | 650 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -30 | 30 | V | Tc=25°C | 2 | |
| Drain Current-Continuous | ID | 7 | A | Tc=25°C (Note 2) | 2 | ||
| Drain Current-Single Pulsed | IDM | 28 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 38 | W | Tc=25°C (Note 2) | 2 | ||
| Max. Operating Junction Temperature | Tj | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
OSD7N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osd7n65-etched.step/osd7n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osd7n65.step/osd7n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
b7b814bf7d186d10, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# OSD7N65
**OSEN** · MOSFETs · TO-252
OSD7N65 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, absolute maximum gate-source voltage ±30 V, threshold 2.0 V to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 650 V, continuous drain current 7 A and pulsed 28 A, also connected to the tab. |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET, continuous body diode forward current 7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=650V, VGS=0 | 2 |
| Forward Transconductance | gfs | 2.3 | | | S | VDS=15V, ID=2.0A | 2 |
| Turn-On Delay Time | Td(on) | | 48 | 80 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 |
| Rise Time | Tr | | 135 | 170 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 |
| Turn-Off Delay Time | Td(off) | | 135 | 175 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 |
| Fall Time | Tf | | 280 | 320 | ns | VDS=325V, ID=7A, RG=25Ω (Note 2) | 3 |
| Total Gate Charge | Qg | | 30 | 65 | nC | VDS=520V, VGS=10V, ID=7A (Note 2) | 3 |
| Input Capacitance | Ciss | | 1080 | 1690 | pF | VDS=25V, VGS=0, f=1MHz | 3 |
| Output Capacitance | Coss | | 118 | 200 | pF | VDS=25V, VGS=0, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 30 | 45 | pF | VDS=25V, VGS=0, f=1MHz | 3 |
| Continuous Drain-Source Diode Forward Current | IS | | | 7 | A | | 3 |
| Diode Forward On-Voltage | VSD | | | 1.4 | V | IS=7A, VGS=0 | 3 |
| Thermal Resistance, Junction to Case | Rth(j-c) | | | 3.3 | ℃/W | | 3 |
| Drain-Source Voltage | VDSS | | | 650 | V | Tc=25°C | 2 |
| Gate-Source Voltage-Continuous | VGS | -30 | | 30 | V | Tc=25°C | 2 |
| Drain Current-Continuous | ID | | | 7 | A | Tc=25°C (Note 2) | 2 |
| Drain Current-Single Pulsed | IDM | | | 28 | A | Note 1 | 2 |
| Power Dissipation | PD | | | 38 | W | Tc=25°C (Note 2) | 2 |
| Max. Operating Junction Temperature | Tj | | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `OSD7N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `osd7n65-etched.step` / `osd7n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `osd7n65.step` / `osd7n65.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [OSEN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590925259602817025) (3 pp, sha256 `b7b814bf7d186d10`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/osd7n65-datasheet.pdf)