Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

OSD7N65

OSEN · MOSFETs · TO-252

OSD7N65 from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; control input, absolute maximum gate-source voltage ±30 V, threshold 2.0 V to 4.0 V at VDS=VGS, ID=250µA.
2 D passive Drain; drain-source voltage rated 650 V, continuous drain current 7 A and pulsed 28 A, also connected to the tab.
3 S passive Source; main current return terminal of the N-channel MOSFET, continuous body diode forward current 7 A.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V ID=250µA, VGS=0V, TJ=25°C 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=650V, VGS=0 2
Forward Transconductance gfs 2.3 S VDS=15V, ID=2.0A 2
Turn-On Delay Time Td(on) 48 80 ns VDS=325V, ID=7A, RG=25Ω (Note 2) 3
Rise Time Tr 135 170 ns VDS=325V, ID=7A, RG=25Ω (Note 2) 3
Turn-Off Delay Time Td(off) 135 175 ns VDS=325V, ID=7A, RG=25Ω (Note 2) 3
Fall Time Tf 280 320 ns VDS=325V, ID=7A, RG=25Ω (Note 2) 3
Total Gate Charge Qg 30 65 nC VDS=520V, VGS=10V, ID=7A (Note 2) 3
Input Capacitance Ciss 1080 1690 pF VDS=25V, VGS=0, f=1MHz 3
Output Capacitance Coss 118 200 pF VDS=25V, VGS=0, f=1MHz 3
Reverse Transfer Capacitance Crss 30 45 pF VDS=25V, VGS=0, f=1MHz 3
Continuous Drain-Source Diode Forward Current IS 7 A 3
Diode Forward On-Voltage VSD 1.4 V IS=7A, VGS=0 3
Thermal Resistance, Junction to Case Rth(j-c) 3.3 ℃/W 3
Drain-Source Voltage VDSS 650 V Tc=25°C 2
Gate-Source Voltage-Continuous VGS -30 30 V Tc=25°C 2
Drain Current-Continuous ID 7 A Tc=25°C (Note 2) 2
Drain Current-Single Pulsed IDM 28 A Note 1 2
Power Dissipation PD 38 W Tc=25°C (Note 2) 2
Max. Operating Junction Temperature Tj 150 ℃ 2

CAD (KiCad official)

  • Symbol: OSD7N65
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: osd7n65-etched.step / osd7n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osd7n65.step / osd7n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 b7b814bf7d186d10, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF