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NYC0102BLT1G
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Littelfuse Thyristors (SCR)/Modules, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NYC0102BLT1G
Littelfuse · Thyristors (SCR)/Modules · SOT-23
NYC0102BLT1G from Littelfuse, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the SCR: gate trigger current is specified at 200 (µA as printed; the micro sign is lost in extraction) max, gate trigger voltage at 0.8 V max, and reverse gate voltage VRGM is 8.0 V max with peak gate power PGM of 0.1 W and peak gate current IFGM of 0.5 A. |
| 2 | A | passive | Anode of the SCR: peak repetitive off-state voltage VDRM/VRRM is 200 V (positive gate voltage must not be applied concurrent with negative anode potential), with on-state RMS current IT(RMS) of 0.25 A and peak non-repetitive surge current ITSM of 7.0 A. |
| 3 | K | passive | Cathode of the SCR, the reference terminal for the gate; characterization uses a gate-to-cathode resistor RGK of 1 kΩ (printed as '1 k' in extraction). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Off-State Voltage | VDRM, VRRM | 200 | V | RGK = IK, TJ = 40 to +110°C, Sine Wave, 50 to 60 Hz | 1 | ||
| On-State Current RMS | IT(RMS) | 0.25 | A | 180° Conduction Angle, TC = 80°C | 1 | ||
| Peak Non-repetitive Surge Current | ITSM | 7 | A | TA = 25°C, 1/2 Cycle, Sine Wave, 60 Hz | 1 | ||
| Circuit Fusing Considerations | I2t | 0.2 | A2s | t = 8.3 ms | 1 | ||
| Forward Peak Gate Power | PGM | 0.1 | W | Pulse Width ≤ 1.0 sec, TA = 25°C | 1 | ||
| Forward Average Gate Power | PG(AV) | 0.02 | W | t = 8.3 msec, TA = 25°C | 1 | ||
| Forward Peak Gate Current | IFGM | 0.5 | A | Pulse Width ≤ 20 s, TA = 25°C | 1 | ||
| Reverse Peak Gate Voltage | VRGM | 8 | V | Pulse Width ≤ 1.0 s, TA = 25°C | 1 | ||
| Operating Junction Temperature Range | TJ | -40 | 125 | °C | @ Rated VRRM and VDRM | 1 | |
| Storage Temperature Range | Tstg | -40 | 150 | °C | 1 | ||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 380 | °C/W | 1 | |||
| Peak Repetitive Forward Blocking Current | IDRM | 1 | A | VDRM = 200 V, RGK = 1 k, TC = 25°C | 2 | ||
| Peak Repetitive Forward Blocking Current | IDRM | 100 | A | VDRM = 200 V, RGK = 1 k, TC = 125°C | 2 | ||
| Peak Repetitive Reverse Blocking Current | IRRM | 1 | A | VDRM = 200 V, RGK = 1 k, TC = 25°C | 2 | ||
| Peak Repetitive Reverse Blocking Current | IRRM | 100 | A | VDRM = 200 V, RGK = 1 k, TC = 125°C | 2 | ||
| Peak Forward On-State Voltage | VTM | 1.7 | V | ITM = 0.4 A, tp < 1 ms, TC = 25°C | 2 | ||
| Gate Trigger Current | IGT | 200 | A | VD = 12 V, RL = 100, TC = 25°C | 2 | ||
| Gate Trigger Voltage | VGT | 0.8 | V | VD = 12 V, RL = 100, TC = 25°C | 2 | ||
| Holding Current | IH | 6 | mA | IT = 50 mA, RGK = 1 k, TC = 25°C | 2 | ||
| Gate Non-Trigger Voltage | VGD | 0.1 | V | VD = VDRM, RL = 3.3 k, TC = 125°C | 2 | ||
| Latching Current | IL | 7 | mA | IG = 1.0 mA, RGK = 1 k, TC = 25°C | 2 | ||
| Gate Reverse Voltage | VRG | 8 | V | IRG = 10 A | 2 | ||
| Critical Rate of Rise of Off-State Voltage | dv/dt | 200 | V/s | RGK = 1 k, TC = 125°C | 2 | ||
| Critical Rate of Rise of On-State Current | di/dt | 50 | A/s | IG = 2xIGT, 60 Hz, tr < 100 ns, TJ = 125°C | 2 |
CAD (KiCad official)
- Symbol:
NYC0102BLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nyc0102blt1g-etched.step/nyc0102blt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nyc0102blt1g.step/nyc0102blt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse datasheet (5 pp, sha256
3929434fba9c2a16, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NYC0102BLT1G
**Littelfuse** · Thyristors (SCR)/Modules · SOT-23
NYC0102BLT1G from Littelfuse, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the SCR: gate trigger current is specified at 200 (µA as printed; the micro sign is lost in extraction) max, gate trigger voltage at 0.8 V max, and reverse gate voltage VRGM is 8.0 V max with peak gate power PGM of 0.1 W and peak gate current IFGM of 0.5 A. |
| 2 | A | passive | Anode of the SCR: peak repetitive off-state voltage VDRM/VRRM is 200 V (positive gate voltage must not be applied concurrent with negative anode potential), with on-state RMS current IT(RMS) of 0.25 A and peak non-repetitive surge current ITSM of 7.0 A. |
| 3 | K | passive | Cathode of the SCR, the reference terminal for the gate; characterization uses a gate-to-cathode resistor RGK of 1 kΩ (printed as '1 k' in extraction). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Off-State Voltage | VDRM, VRRM | | | 200 | V | RGK = IK, TJ = 40 to +110°C, Sine Wave, 50 to 60 Hz | 1 |
| On-State Current RMS | IT(RMS) | | | 0.25 | A | 180° Conduction Angle, TC = 80°C | 1 |
| Peak Non-repetitive Surge Current | ITSM | | | 7 | A | TA = 25°C, 1/2 Cycle, Sine Wave, 60 Hz | 1 |
| Circuit Fusing Considerations | I2t | | | 0.2 | A2s | t = 8.3 ms | 1 |
| Forward Peak Gate Power | PGM | | | 0.1 | W | Pulse Width ≤ 1.0 sec, TA = 25°C | 1 |
| Forward Average Gate Power | PG(AV) | | | 0.02 | W | t = 8.3 msec, TA = 25°C | 1 |
| Forward Peak Gate Current | IFGM | | | 0.5 | A | Pulse Width ≤ 20 s, TA = 25°C | 1 |
| Reverse Peak Gate Voltage | VRGM | | | 8 | V | Pulse Width ≤ 1.0 s, TA = 25°C | 1 |
| Operating Junction Temperature Range | TJ | -40 | | 125 | °C | @ Rated VRRM and VDRM | 1 |
| Storage Temperature Range | Tstg | -40 | | 150 | °C | | 1 |
| Total Device Dissipation FR-5 Board | PD | | | 225 | mW | TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient | RJA | | | 380 | °C/W | | 1 |
| Peak Repetitive Forward Blocking Current | IDRM | | | 1 | A | VDRM = 200 V, RGK = 1 k, TC = 25°C | 2 |
| Peak Repetitive Forward Blocking Current | IDRM | | | 100 | A | VDRM = 200 V, RGK = 1 k, TC = 125°C | 2 |
| Peak Repetitive Reverse Blocking Current | IRRM | | | 1 | A | VDRM = 200 V, RGK = 1 k, TC = 25°C | 2 |
| Peak Repetitive Reverse Blocking Current | IRRM | | | 100 | A | VDRM = 200 V, RGK = 1 k, TC = 125°C | 2 |
| Peak Forward On-State Voltage | VTM | | | 1.7 | V | ITM = 0.4 A, tp < 1 ms, TC = 25°C | 2 |
| Gate Trigger Current | IGT | | | 200 | A | VD = 12 V, RL = 100, TC = 25°C | 2 |
| Gate Trigger Voltage | VGT | | | 0.8 | V | VD = 12 V, RL = 100, TC = 25°C | 2 |
| Holding Current | IH | | | 6 | mA | IT = 50 mA, RGK = 1 k, TC = 25°C | 2 |
| Gate Non-Trigger Voltage | VGD | 0.1 | | | V | VD = VDRM, RL = 3.3 k, TC = 125°C | 2 |
| Latching Current | IL | | | 7 | mA | IG = 1.0 mA, RGK = 1 k, TC = 25°C | 2 |
| Gate Reverse Voltage | VRG | 8 | | | V | IRG = 10 A | 2 |
| Critical Rate of Rise of Off-State Voltage | dv/dt | 200 | | | V/s | RGK = 1 k, TC = 125°C | 2 |
| Critical Rate of Rise of On-State Current | di/dt | | | 50 | A/s | IG = 2xIGT, 60 Hz, tr < 100 ns, TJ = 125°C | 2 |
## CAD (KiCad official)
- Symbol: `NYC0102BLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nyc0102blt1g-etched.step` / `nyc0102blt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nyc0102blt1g.step` / `nyc0102blt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Littelfuse datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588880666896814080) (5 pp, sha256 `3929434fba9c2a16`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nyc0102blt1g-datasheet.pdf)