component

NYC0102BLT1G

Public Made by Adom

by adom

Littelfuse Thyristors (SCR)/Modules, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnyc0102blt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NYC0102BLT1G

Littelfuse · Thyristors (SCR)/Modules · SOT-23

NYC0102BLT1G from Littelfuse, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the SCR: gate trigger current is specified at 200 (µA as printed; the micro sign is lost in extraction) max, gate trigger voltage at 0.8 V max, and reverse gate voltage VRGM is 8.0 V max with peak gate power PGM of 0.1 W and peak gate current IFGM of 0.5 A.
2 A passive Anode of the SCR: peak repetitive off-state voltage VDRM/VRRM is 200 V (positive gate voltage must not be applied concurrent with negative anode potential), with on-state RMS current IT(RMS) of 0.25 A and peak non-repetitive surge current ITSM of 7.0 A.
3 K passive Cathode of the SCR, the reference terminal for the gate; characterization uses a gate-to-cathode resistor RGK of 1 kΩ (printed as '1 k' in extraction).

Key specifications

Parameter Value
Manufacturer Littelfuse
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Repetitive Off-State Voltage VDRM, VRRM 200 V RGK = IK, TJ = 40 to +110°C, Sine Wave, 50 to 60 Hz 1
On-State Current RMS IT(RMS) 0.25 A 180° Conduction Angle, TC = 80°C 1
Peak Non-repetitive Surge Current ITSM 7 A TA = 25°C, 1/2 Cycle, Sine Wave, 60 Hz 1
Circuit Fusing Considerations I2t 0.2 A2s t = 8.3 ms 1
Forward Peak Gate Power PGM 0.1 W Pulse Width ≤ 1.0 sec, TA = 25°C 1
Forward Average Gate Power PG(AV) 0.02 W t = 8.3 msec, TA = 25°C 1
Forward Peak Gate Current IFGM 0.5 A Pulse Width ≤ 20 s, TA = 25°C 1
Reverse Peak Gate Voltage VRGM 8 V Pulse Width ≤ 1.0 s, TA = 25°C 1
Operating Junction Temperature Range TJ -40 125 °C @ Rated VRRM and VDRM 1
Storage Temperature Range Tstg -40 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 380 °C/W 1
Peak Repetitive Forward Blocking Current IDRM 1 A VDRM = 200 V, RGK = 1 k, TC = 25°C 2
Peak Repetitive Forward Blocking Current IDRM 100 A VDRM = 200 V, RGK = 1 k, TC = 125°C 2
Peak Repetitive Reverse Blocking Current IRRM 1 A VDRM = 200 V, RGK = 1 k, TC = 25°C 2
Peak Repetitive Reverse Blocking Current IRRM 100 A VDRM = 200 V, RGK = 1 k, TC = 125°C 2
Peak Forward On-State Voltage VTM 1.7 V ITM = 0.4 A, tp < 1 ms, TC = 25°C 2
Gate Trigger Current IGT 200 A VD = 12 V, RL = 100, TC = 25°C 2
Gate Trigger Voltage VGT 0.8 V VD = 12 V, RL = 100, TC = 25°C 2
Holding Current IH 6 mA IT = 50 mA, RGK = 1 k, TC = 25°C 2
Gate Non-Trigger Voltage VGD 0.1 V VD = VDRM, RL = 3.3 k, TC = 125°C 2
Latching Current IL 7 mA IG = 1.0 mA, RGK = 1 k, TC = 25°C 2
Gate Reverse Voltage VRG 8 V IRG = 10 A 2
Critical Rate of Rise of Off-State Voltage dv/dt 200 V/s RGK = 1 k, TC = 125°C 2
Critical Rate of Rise of On-State Current di/dt 50 A/s IG = 2xIGT, 60 Hz, tr < 100 ns, TJ = 125°C 2

CAD (KiCad official)

  • Symbol: NYC0102BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nyc0102blt1g-etched.step / nyc0102blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nyc0102blt1g.step / nyc0102blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse datasheet (5 pp, sha256 3929434fba9c2a16, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF