# NXV100XPR

**Nexperia** · MOSFETs · TO-236AB

NXV100XPR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to -12 V to 12 V at Tj = 25 °C. |
| 2 | S | passive | Source of the P-channel MOSFET; source current is limited to -0.4 A at Tamb = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is limited to -30 V and continuous drain current to -1.5 A at Tamb = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS |  |  | -30 | V |  | 2 |
| gate-source voltage | VGS | -12 |  | 12 | V | Tj = 25 °C | 2 |
| drain current | ID |  |  | -1.5 | A | VGS = -4.5 V; Tamb = 25 °C [1] | 2 |
| drain current | ID |  |  | -0.95 | A | VGS = -4.5 V; Tamb = 100 °C [1] | 2 |
| peak drain current | IDM |  |  | -6 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 2 |
| total power dissipation | Ptot |  |  | 340 | mW | Tamb = 25 °C [2] | 2 |
| total power dissipation | Ptot |  |  | 480 | mW | [1] | 2 |
| total power dissipation | Ptot |  |  | 2.1 | W | Tsp = 25 °C | 2 |
| junction temperature | Tj | -55 |  | 150 | °C |  | 2 |
| ambient temperature | Tamb | -55 |  | 150 | °C |  | 2 |
| storage temperature | Tstg | -65 |  | 150 | °C |  | 2 |
| source current | IS |  |  | -0.4 | A | Tamb = 25 °C [1] | 2 |
| drain-source breakdown voltage | V(BR)DSS | -30 |  |  | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 5 |
| gate-source threshold voltage | VGSth | -0.5 | -0.6 | -0.9 | V | ID = -250 µA; VDS=VGS; Tj = 25 °C | 5 |
| drain leakage current | IDSS |  |  | -1 | µA | VDS = -30 V; VGS = 0 V; Tj = 25 °C | 5 |
| gate leakage current | IGSS |  |  | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 5 |
| gate leakage current | IGSS |  |  | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 5 |
| drain-source on-state resistance | RDSon |  | 104 | 140 | mΩ | VGS = -4.5 V; ID = -1.5 A; Tj = 25 °C | 5 |
| drain-source on-state resistance | RDSon |  | 160 | 220 | mΩ | VGS = -4.5 V; ID = -1.5 A; Tj = 150 °C | 5 |
| drain-source on-state resistance | RDSon |  | 131 | 220 | mΩ | VGS = -2.5 V; ID = -1.2 A; Tj = 25 °C | 5 |
| drain-source on-state resistance | RDSon |  | 175 | 250 | mΩ | VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C | 5 |
| total gate charge | QG(tot) |  | 4.2 | 6.4 | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 |
| source-drain voltage | VSD |  | -0.7 | -1.2 | V | IS = -0.4 A; VGS = 0 V; Tj = 25 °C | 5 |
| thermal resistance junction to ambient | Rth(j-a) |  | 325 | 370 | K/W | [1] FR4 PCB, single-sided copper, standard footprint | 4 |
| thermal resistance junction to ambient | Rth(j-a) |  | 230 | 260 | K/W | [2] FR4 PCB, mounting pad for drain 6 cm2 | 4 |
| thermal resistance junction to solder point | Rth(j-sp) |  | 50 | 60 | K/W |  | 4 |
| transconductance | gfs |  | 5 |  | S | VDS = -5 V; ID = -1.5 A; Tj = 25 °C | 5 |
| gate resistance | RG |  | 8.4 |  | Ω | f = 1 MHz | 5 |
| gate-source charge | QGS |  | 0.5 |  | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 |
| gate-drain charge | QGD |  | 1.2 |  | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 |
| input capacitance | Ciss |  | 354 |  | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 |
| output capacitance | Coss |  | 39 |  | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 |
| reverse transfer capacitance | Crss |  | 34 |  | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 |
| turn-on delay time | td(on) |  | 5 |  | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 |
| rise time | tr |  | 8 |  | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 |
| turn-off delay time | td(off) |  | 40 |  | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 |
| fall time | tf |  | 15 |  | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 |

## CAD (KiCad official)

- Symbol: `NXV100XPR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files: `nxv100xpr-etched.step` / `nxv100xpr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nxv100xpr.step` / `nxv100xpr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/NXV100XPR.pdf) (12 pp, sha256 `95cbe178e14a1192`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nxv100xpr-datasheet.pdf)