component
NXV100XPR
Public Made by Adomby adom
Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNXV100XPR
Nexperia · MOSFETs · TO-236AB
NXV100XPR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to -12 V to 12 V at Tj = 25 °C. |
| 2 | S | passive | Source of the P-channel MOSFET; source current is limited to -0.4 A at Tamb = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is limited to -30 V and continuous drain current to -1.5 A at Tamb = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | -30 | V | 2 | |||
| gate-source voltage | VGS | -12 | 12 | V | Tj = 25 °C | 2 | |
| drain current | ID | -1.5 | A | VGS = -4.5 V; Tamb = 25 °C [1] | 2 | ||
| drain current | ID | -0.95 | A | VGS = -4.5 V; Tamb = 100 °C [1] | 2 | ||
| peak drain current | IDM | -6 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 2 | ||
| total power dissipation | Ptot | 340 | mW | Tamb = 25 °C [2] | 2 | ||
| total power dissipation | Ptot | 480 | mW | [1] | 2 | ||
| total power dissipation | Ptot | 2.1 | W | Tsp = 25 °C | 2 | ||
| junction temperature | Tj | -55 | 150 | °C | 2 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 2 | ||
| storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| source current | IS | -0.4 | A | Tamb = 25 °C [1] | 2 | ||
| drain-source breakdown voltage | V(BR)DSS | -30 | V | ID = -250 µA; VGS = 0 V; Tj = 25 °C | 5 | ||
| gate-source threshold voltage | VGSth | -0.5 | -0.6 | -0.9 | V | ID = -250 µA; VDS=VGS; Tj = 25 °C | 5 |
| drain leakage current | IDSS | -1 | µA | VDS = -30 V; VGS = 0 V; Tj = 25 °C | 5 | ||
| gate leakage current | IGSS | -100 | nA | VGS = -12 V; VDS = 0 V; Tj = 25 °C | 5 | ||
| gate leakage current | IGSS | 100 | nA | VGS = 12 V; VDS = 0 V; Tj = 25 °C | 5 | ||
| drain-source on-state resistance | RDSon | 104 | 140 | mΩ | VGS = -4.5 V; ID = -1.5 A; Tj = 25 °C | 5 | |
| drain-source on-state resistance | RDSon | 160 | 220 | mΩ | VGS = -4.5 V; ID = -1.5 A; Tj = 150 °C | 5 | |
| drain-source on-state resistance | RDSon | 131 | 220 | mΩ | VGS = -2.5 V; ID = -1.2 A; Tj = 25 °C | 5 | |
| drain-source on-state resistance | RDSon | 175 | 250 | mΩ | VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C | 5 | |
| total gate charge | QG(tot) | 4.2 | 6.4 | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 | |
| source-drain voltage | VSD | -0.7 | -1.2 | V | IS = -0.4 A; VGS = 0 V; Tj = 25 °C | 5 | |
| thermal resistance junction to ambient | Rth(j-a) | 325 | 370 | K/W | [1] FR4 PCB, single-sided copper, standard footprint | 4 | |
| thermal resistance junction to ambient | Rth(j-a) | 230 | 260 | K/W | [2] FR4 PCB, mounting pad for drain 6 cm2 | 4 | |
| thermal resistance junction to solder point | Rth(j-sp) | 50 | 60 | K/W | 4 | ||
| transconductance | gfs | 5 | S | VDS = -5 V; ID = -1.5 A; Tj = 25 °C | 5 | ||
| gate resistance | RG | 8.4 | Ω | f = 1 MHz | 5 | ||
| gate-source charge | QGS | 0.5 | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 | ||
| gate-drain charge | QGD | 1.2 | nC | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; Tj = 25 °C | 5 | ||
| input capacitance | Ciss | 354 | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 | ||
| output capacitance | Coss | 39 | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 | ||
| reverse transfer capacitance | Crss | 34 | pF | VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 5 | ||
| turn-on delay time | td(on) | 5 | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 | ||
| rise time | tr | 8 | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 | ||
| turn-off delay time | td(off) | 40 | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 | ||
| fall time | tf | 15 | ns | VDS = -15 V; ID = -1.5 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
NXV100XPR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
nxv100xpr-etched.step/nxv100xpr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nxv100xpr.step/nxv100xpr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
95cbe178e14a1192, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).