component
NX7002BKR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nx7002bkr: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
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17d ago
NX7002BKR
Nexperia · MOSFETs · SOT-23
NX7002BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated -20 V to 20 V at Tj = 25 °C. |
| 2 | S | passive | Source terminal of the MOSFET; source current (IS) is rated at 200 mA maximum at Tamb = 25 °C. |
| 3 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 60 V maximum, with continuous drain current up to 270 mA at Tamb = 25 °C (VGS = 10 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | 60 | V | 3 | |||
| gate-source voltage | VGS | -20 | 20 | V | Tj = 25 °C | 3 | |
| drain current | ID | 270 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 | ||
| drain current | ID | 170 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 | ||
| drain current | ID | 330 | mA | VGS = 10 V; Tsp = 25 °C | 3 | ||
| peak drain current | IDM | 0.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| total power dissipation | Ptot | 310 | mW | Tamb = 25 °C [2] | 3 | ||
| total power dissipation | Ptot | 400 | mW | [1] (no test condition printed) | 3 | ||
| total power dissipation | Ptot | 1670 | mW | Tsp = 25 °C | 3 | ||
| junction temperature | Tj | -55 | 150 | °C | 3 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| source current | IS | 200 | mA | Tamb = 25 °C [1] | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 350 | 405 | K/W | in free air; [1] device on FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 | |
| thermal resistance from junction to ambient | Rth(j-a) | 270 | 310 | K/W | in free air; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 | 4 | |
| thermal resistance from junction to solder point | Rth(j-sp) | 65 | 75 | K/W | 4 | ||
| drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate-source threshold voltage | VGSth | 1.1 | 1.6 | 2.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -1 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | 0.3 | µA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -0.3 | µA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain-source on-state resistance | RDSon | 2.2 | 2.8 | Ω | VGS = 10 V; ID = 200 mA; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 4.5 | 5.7 | Ω | VGS = 10 V; ID = 100 mA; Tj = 150 °C | 6 | |
| drain-source on-state resistance | RDSon | 2.5 | 3.2 | Ω | VGS = 5 V; ID = 200 mA; Tj = 25 °C | 6 | |
| source-drain voltage | VSD | 0.87 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
NX7002BKR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nx7002bkr-etched.step/nx7002bkr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nx7002bkr.step/nx7002bkr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
568045cb801dbeae, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NX7002BKR
**Nexperia** · MOSFETs · SOT-23
NX7002BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated -20 V to 20 V at Tj = 25 °C. |
| 2 | S | passive | Source terminal of the MOSFET; source current (IS) is rated at 200 mA maximum at Tamb = 25 °C. |
| 3 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 60 V maximum, with continuous drain current up to 270 mA at Tamb = 25 °C (VGS = 10 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | | | 60 | V | | 3 |
| gate-source voltage | VGS | -20 | | 20 | V | Tj = 25 °C | 3 |
| drain current | ID | | | 270 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 |
| drain current | ID | | | 170 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 |
| drain current | ID | | | 330 | mA | VGS = 10 V; Tsp = 25 °C | 3 |
| peak drain current | IDM | | | 0.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| total power dissipation | Ptot | | | 310 | mW | Tamb = 25 °C [2] | 3 |
| total power dissipation | Ptot | | | 400 | mW | [1] (no test condition printed) | 3 |
| total power dissipation | Ptot | | | 1670 | mW | Tsp = 25 °C | 3 |
| junction temperature | Tj | -55 | | 150 | °C | | 3 |
| ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| source current | IS | | | 200 | mA | Tamb = 25 °C [1] | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | 350 | 405 | K/W | in free air; [1] device on FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 |
| thermal resistance from junction to ambient | Rth(j-a) | | 270 | 310 | K/W | in free air; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 | 4 |
| thermal resistance from junction to solder point | Rth(j-sp) | | 65 | 75 | K/W | | 4 |
| drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| gate-source threshold voltage | VGSth | 1.1 | 1.6 | 2.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | | | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | -1 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | 0.3 | µA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | | | -0.3 | µA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |
| drain-source on-state resistance | RDSon | | 2.2 | 2.8 | Ω | VGS = 10 V; ID = 200 mA; Tj = 25 °C | 6 |
| drain-source on-state resistance | RDSon | | 4.5 | 5.7 | Ω | VGS = 10 V; ID = 100 mA; Tj = 150 °C | 6 |
| drain-source on-state resistance | RDSon | | 2.5 | 3.2 | Ω | VGS = 5 V; ID = 200 mA; Tj = 25 °C | 6 |
| source-drain voltage | VSD | | 0.87 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `NX7002BKR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nx7002bkr-etched.step` / `nx7002bkr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nx7002bkr.step` / `nx7002bkr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586179682186641408) (16 pp, sha256 `568045cb801dbeae`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nx7002bkr-datasheet.pdf)