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nx7002bkr: specified limits as data (metadata.characteristics, 29 rows from the datasheet)

Ray ·121b9b1dd9 ·17d ago ·parent eadb015
2 files changed +392−1
README.md+36
@@ -21,6 +21,42 @@ NX7002BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| drain-source voltage | VDS |  |  | 60 | V |  | 3 |+| gate-source voltage | VGS | -20 |  | 20 | V | Tj = 25 °C | 3 |+| drain current | ID |  |  | 270 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 |+| drain current | ID |  |  | 170 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 |+| drain current | ID |  |  | 330 | mA | VGS = 10 V; Tsp = 25 °C | 3 |+| peak drain current | IDM |  |  | 0.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |+| total power dissipation | Ptot |  |  | 310 | mW | Tamb = 25 °C [2] | 3 |+| total power dissipation | Ptot |  |  | 400 | mW | [1] (no test condition printed) | 3 |+| total power dissipation | Ptot |  |  | 1670 | mW | Tsp = 25 °C | 3 |+| junction temperature | Tj | -55 |  | 150 | °C |  | 3 |+| ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |+| storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |+| source current | IS |  |  | 200 | mA | Tamb = 25 °C [1] | 3 |+| thermal resistance from junction to ambient | Rth(j-a) |  | 350 | 405 | K/W | in free air; [1] device on FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 |+| thermal resistance from junction to ambient | Rth(j-a) |  | 270 | 310 | K/W | in free air; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 | 4 |+| thermal resistance from junction to solder point | Rth(j-sp) |  | 65 | 75 | K/W |  | 4 |+| drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |+| gate-source threshold voltage | VGSth | 1.1 | 1.6 | 2.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |+| drain leakage current | IDSS |  |  | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | -10 | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | -1 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | 0.3 | µA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |+| gate leakage current | IGSS |  |  | -0.3 | µA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |+| drain-source on-state resistance | RDSon |  | 2.2 | 2.8 | Ω | VGS = 10 V; ID = 200 mA; Tj = 25 °C | 6 |+| drain-source on-state resistance | RDSon |  | 4.5 | 5.7 | Ω | VGS = 10 V; ID = 100 mA; Tj = 150 °C | 6 |+| drain-source on-state resistance | RDSon |  | 2.5 | 3.2 | Ω | VGS = 5 V; ID = 200 mA; Tj = 25 °C | 6 |+| source-drain voltage | VSD |  | 0.87 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |+ ## CAD (KiCad official)  - Symbol: `NX7002BKR`
page.json+356−1
@@ -149,6 +149,361 @@       "Package": "SOT-23",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "568045cb801dbeae",+      "rows": [+        {+          "name": "drain-source voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "Tj = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 270,+          "conditions": "VGS = 10 V; Tamb = 25 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 170,+          "conditions": "VGS = 10 V; Tamb = 100 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "drain current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 330,+          "conditions": "VGS = 10 V; Tsp = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "peak drain current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 0.9,+          "conditions": "Tamb = 25 °C; single pulse; tp ≤ 10 µs",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 310,+          "conditions": "Tamb = 25 °C [2]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 400,+          "conditions": "[1] (no test condition printed)",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "total power dissipation",+          "symbol": "Ptot",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 1670,+          "conditions": "Tsp = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "junction temperature",+          "symbol": "Tj",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "ambient temperature",+          "symbol": "Tamb",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "storage temperature",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -65,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "source current",+          "symbol": "IS",+          "kind": "absolute_maximum",+          "unit": "mA",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "Tamb = 25 °C [1]",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 350,+          "max": 405,+          "conditions": "in free air; [1] device on FR4 PCB, single-sided copper, tin-plated, standard footprint",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "thermal resistance from junction to ambient",+          "symbol": "Rth(j-a)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 270,+          "max": 310,+          "conditions": "in free air; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "thermal resistance from junction to solder point",+          "symbol": "Rth(j-sp)",+          "kind": "thermal",+          "unit": "K/W",+          "min": null,+          "typ": 65,+          "max": 75,+          "conditions": "",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "drain-source breakdown voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 60,+          "typ": null,+          "max": null,+          "conditions": "ID = 250 µA; VGS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate-source threshold voltage",+          "symbol": "VGSth",+          "kind": "electrical",+          "unit": "V",+          "min": 1.1,+          "typ": 1.6,+          "max": 2.1,+          "conditions": "ID = 250 µA; VDS = VGS; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "drain leakage current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS = 60 V; VGS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VGS = 20 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": -10,+          "conditions": "VGS = -20 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VGS = 10 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": -1,+          "conditions": "VGS = -10 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 0.3,+          "conditions": "VGS = 5 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "gate leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": -0.3,+          "conditions": "VGS = -5 V; VDS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 2.2,+          "max": 2.8,+          "conditions": "VGS = 10 V; ID = 200 mA; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 4.5,+          "max": 5.7,+          "conditions": "VGS = 10 V; ID = 100 mA; Tj = 150 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "drain-source on-state resistance",+          "symbol": "RDSon",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 2.5,+          "max": 3.2,+          "conditions": "VGS = 5 V; ID = 200 mA; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        },+        {+          "name": "source-drain voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.87,+          "max": 1.2,+          "conditions": "IS = 200 mA; VGS = 0 V; Tj = 25 °C",+          "source_page": 6,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -190,4 +545,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}