component
NX3008NBKW
Public Made by Adomby adom
Nexperia MOSFETs, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NX3008NBKW
Nexperia · MOSFETs · SC-70
NX3008NBKW from Nexperia, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is limited to -8 V to 8 V (VGS, Table 5, page 3). |
| 2 | S | passive | Source of the N-channel MOSFET; the source current is limited to 300 mA at Tamb = 25 °C (IS, Table 5, page 3). |
| 3 | D | passive | Drain of the N-channel MOSFET; the drain-source voltage is limited to 30 V and the drain current to 350 mA at Tamb = 25 °C (Table 5, page 3). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | 3 | |||
| Gate-source voltage | VGS | -8 | 8 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 350 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 230 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| Peak drain current | IDM | 1.4 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 260 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 310 | mW | Device mounted on FR4 PCB, mounting pad for drain 1 cm2 [1] | 3 | ||
| Total power dissipation | Ptot | 830 | mW | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 300 | mA | Tamb = 25 °C [1] | 3 | ||
| Electrostatic discharge voltage | VESD | 2000 | V | HBM; measured between all pins [3] | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 310 | 370 | K/W | In free air; device mounted on FR4 PCB, standard footprint [1] | 5 | |
| Thermal resistance junction to ambient | Rth(j-a) | 260 | 300 | K/W | In free air; device mounted on FR4 PCB, mounting pad for drain 1 cm2 [2] | 5 | |
| Thermal resistance junction to solder point | Rth(j-sp) | 115 | K/W | 5 | |||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.6 | 0.9 | 1.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 30 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Drain leakage current | IDSS | 10 | µA | VDS = 30 V; VGS = 0 V; Tj = 150 °C | 6 | ||
| Gate leakage current | IGSS | 0.2 | 1 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 1 | 1.4 | Ω | VGS = 4.5 V; ID = 350 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 1.8 | 2.5 | Ω | VGS = 4.5 V; ID = 350 mA; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 1.4 | 2.1 | Ω | VGS = 2.5 V; ID = 200 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 2 | 2.8 | Ω | VGS = 1.8 V; ID = 10 mA; Tj = 25 °C | 6 | |
| Total gate charge | QG(tot) | 0.52 | 0.68 | nC | VDS = 15 V; ID = 350 mA; VGS = 4.5 V; Tj = 25 °C | 6 | |
| Input capacitance | Ciss | 34 | 50 | pF | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Turn-on delay time | td(on) | 15 | 30 | ns | VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Turn-off delay time | td(off) | 69 | 138 | ns | VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.47 | 0.85 | 1.2 | V | IS = 350 mA; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
NX3008NBKW - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
nx3008nbkw-etched.step/nx3008nbkw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nx3008nbkw.step/nx3008nbkw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (15 pp, sha256
56285893faef95e2, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NX3008NBKW
**Nexperia** · MOSFETs · SC-70
NX3008NBKW from Nexperia, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is limited to -8 V to 8 V (VGS, Table 5, page 3). |
| 2 | S | passive | Source of the N-channel MOSFET; the source current is limited to 300 mA at Tamb = 25 °C (IS, Table 5, page 3). |
| 3 | D | passive | Drain of the N-channel MOSFET; the drain-source voltage is limited to 30 V and the drain current to 350 mA at Tamb = 25 °C (Table 5, page 3). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 30 | V | | 3 |
| Gate-source voltage | VGS | -8 | | 8 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | 350 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID | | | 230 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |
| Peak drain current | IDM | | | 1.4 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot | | | 260 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot | | | 310 | mW | Device mounted on FR4 PCB, mounting pad for drain 1 cm2 [1] | 3 |
| Total power dissipation | Ptot | | | 830 | mW | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | 300 | mA | Tamb = 25 °C [1] | 3 |
| Electrostatic discharge voltage | VESD | | | 2000 | V | HBM; measured between all pins [3] | 3 |
| Thermal resistance junction to ambient | Rth(j-a) | | 310 | 370 | K/W | In free air; device mounted on FR4 PCB, standard footprint [1] | 5 |
| Thermal resistance junction to ambient | Rth(j-a) | | 260 | 300 | K/W | In free air; device mounted on FR4 PCB, mounting pad for drain 1 cm2 [2] | 5 |
| Thermal resistance junction to solder point | Rth(j-sp) | | | 115 | K/W | | 5 |
| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 0.6 | 0.9 | 1.1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 1 | µA | VDS = 30 V; VGS = 0 V; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 10 | µA | VDS = 30 V; VGS = 0 V; Tj = 150 °C | 6 |
| Gate leakage current | IGSS | | 0.2 | 1 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 1 | 1.4 | Ω | VGS = 4.5 V; ID = 350 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 1.8 | 2.5 | Ω | VGS = 4.5 V; ID = 350 mA; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 1.4 | 2.1 | Ω | VGS = 2.5 V; ID = 200 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 2 | 2.8 | Ω | VGS = 1.8 V; ID = 10 mA; Tj = 25 °C | 6 |
| Total gate charge | QG(tot) | | 0.52 | 0.68 | nC | VDS = 15 V; ID = 350 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| Input capacitance | Ciss | | 34 | 50 | pF | VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) | | 15 | 30 | ns | VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) | | 69 | 138 | ns | VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | 0.47 | 0.85 | 1.2 | V | IS = 350 mA; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `NX3008NBKW`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `nx3008nbkw-etched.step` / `nx3008nbkw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nx3008nbkw.step` / `nx3008nbkw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/NX3008NBKW.pdf) (15 pp, sha256 `56285893faef95e2`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nx3008nbkw-datasheet.pdf)