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Contents

README

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NX3008NBKW

Nexperia · MOSFETs · SC-70

NX3008NBKW from Nexperia, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is limited to -8 V to 8 V (VGS, Table 5, page 3).
2 S passive Source of the N-channel MOSFET; the source current is limited to 300 mA at Tamb = 25 °C (IS, Table 5, page 3).
3 D passive Drain of the N-channel MOSFET; the drain-source voltage is limited to 30 V and the drain current to 350 mA at Tamb = 25 °C (Table 5, page 3).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 3
Gate-source voltage VGS -8 8 V Tj = 25 °C 3
Drain current ID 350 mA VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 230 mA VGS = 4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM 1.4 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 260 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 310 mW Device mounted on FR4 PCB, mounting pad for drain 1 cm2 [1] 3
Total power dissipation Ptot 830 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 300 mA Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 2000 V HBM; measured between all pins [3] 3
Thermal resistance junction to ambient Rth(j-a) 310 370 K/W In free air; device mounted on FR4 PCB, standard footprint [1] 5
Thermal resistance junction to ambient Rth(j-a) 260 300 K/W In free air; device mounted on FR4 PCB, mounting pad for drain 1 cm2 [2] 5
Thermal resistance junction to solder point Rth(j-sp) 115 K/W 5
Drain-source breakdown voltage V(BR)DSS 30 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.6 0.9 1.1 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 30 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS 10 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C 6
Gate leakage current IGSS 0.2 1 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 1 1.4 Ω VGS = 4.5 V; ID = 350 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 1.8 2.5 Ω VGS = 4.5 V; ID = 350 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 1.4 2.1 Ω VGS = 2.5 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2 2.8 Ω VGS = 1.8 V; ID = 10 mA; Tj = 25 °C 6
Total gate charge QG(tot) 0.52 0.68 nC VDS = 15 V; ID = 350 mA; VGS = 4.5 V; Tj = 25 °C 6
Input capacitance Ciss 34 50 pF VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Turn-on delay time td(on) 15 30 ns VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Turn-off delay time td(off) 69 138 ns VDS = 20 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Source-drain voltage VSD 0.47 0.85 1.2 V IS = 350 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: NX3008NBKW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: nx3008nbkw-etched.step / nx3008nbkw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nx3008nbkw.step / nx3008nbkw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 56285893faef95e2, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF