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NVMFD5C466NLT1G

Public Made by Adom

by adom

onsemi MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NVMFD5C466NLT1G

onsemi · MOSFETs · DFN-8(5x6)

NVMFD5C466NLT1G from onsemi, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1, rated for VGS ±20 V.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2, rated for VGS ±20 V.
5 D2 passive Drain of N-channel MOSFET 2, rated for VDSS 40 V.
6 D2 passive Drain of N-channel MOSFET 2, rated for VDSS 40 V.
7 D1 passive Drain of N-channel MOSFET 1, rated for VDSS 40 V.
8 D1 passive Drain of N-channel MOSFET 1, rated for VDSS 40 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer onsemi
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 40 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 52 A TC = 25°C, steady state, RθJC (Notes 1, 2, 3) 1
Continuous Drain Current ID 37 A TC = 100°C, steady state, RθJC (Notes 1, 2, 3) 1
Power Dissipation PD 38 W TC = 25°C, RθJC (Notes 1, 2) 1
Power Dissipation PD 19 W TC = 100°C, RθJC (Notes 1, 2) 1
Continuous Drain Current ID 15 A TA = 25°C, steady state, RθJA (Notes 1, 2, 3) 1
Continuous Drain Current ID 11 A TA = 100°C, steady state, RθJA (Notes 1, 2, 3) 1
Power Dissipation PD 3 W TA = 25°C, RθJA (Notes 1, 2) 1
Power Dissipation PD 1.5 W TA = 100°C, RθJA (Notes 1, 2) 1
Pulsed Drain Current IDM 198 A TA = 25°C, tp = 10 s 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Source Current (Body Diode) IS 31.3 A 1
Single Pulse Drain-to-Source Avalanche Energy EAS 72 mJ TJ = 25°C, IL(pk) = 3 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8″ from case for 10 s 1
Junction-to-Case Thermal Resistance, Steady State RθJC 4 °C/W Steady state 1
Junction-to-Ambient Thermal Resistance, Steady State RθJA 47.3 °C/W Steady state, surface-mounted on FR4, 650 mm2 2 oz. Cu pad (Note 2) 1
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VGS = 0 V, VDS = 40 V, TJ = 25 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VGS = 0 V, VDS = 40 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = 20 V 2
Gate Threshold Voltage VGS(TH) 1.2 2.2 V VGS = VDS, ID = 30 µA 2
Drain-to-Source On Resistance RDS(on) 6.2 7.4 mΩ VGS = 10 V, ID = 10 A 2
Drain-to-Source On Resistance RDS(on) 10 12.6 mΩ VGS = 4.5 V, ID = 10 A 2
Forward Diode Voltage VSD 0.9 1.2 V VGS = 0 V, IS = 10 A, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NVMFD5C466NLT1G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: nvmfd5c466nlt1g-etched.step / nvmfd5c466nlt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvmfd5c466nlt1g.step / nvmfd5c466nlt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 a7f30d06acfa56f6, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF