component
NVMFD5C466NLT1G
Public Made by Adomby adom
onsemi MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNVMFD5C466NLT1G
onsemi · MOSFETs · DFN-8(5x6)
NVMFD5C466NLT1G from onsemi, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel MOSFET 1. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, rated for VGS ±20 V. |
| 3 | S2 | passive | Source of N-channel MOSFET 2. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, rated for VGS ±20 V. |
| 5 | D2 | passive | Drain of N-channel MOSFET 2, rated for VDSS 40 V. |
| 6 | D2 | passive | Drain of N-channel MOSFET 2, rated for VDSS 40 V. |
| 7 | D1 | passive | Drain of N-channel MOSFET 1, rated for VDSS 40 V. |
| 8 | D1 | passive | Drain of N-channel MOSFET 1, rated for VDSS 40 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 52 | A | TC = 25°C, steady state, RθJC (Notes 1, 2, 3) | 1 | ||
| Continuous Drain Current | ID | 37 | A | TC = 100°C, steady state, RθJC (Notes 1, 2, 3) | 1 | ||
| Power Dissipation | PD | 38 | W | TC = 25°C, RθJC (Notes 1, 2) | 1 | ||
| Power Dissipation | PD | 19 | W | TC = 100°C, RθJC (Notes 1, 2) | 1 | ||
| Continuous Drain Current | ID | 15 | A | TA = 25°C, steady state, RθJA (Notes 1, 2, 3) | 1 | ||
| Continuous Drain Current | ID | 11 | A | TA = 100°C, steady state, RθJA (Notes 1, 2, 3) | 1 | ||
| Power Dissipation | PD | 3 | W | TA = 25°C, RθJA (Notes 1, 2) | 1 | ||
| Power Dissipation | PD | 1.5 | W | TA = 100°C, RθJA (Notes 1, 2) | 1 | ||
| Pulsed Drain Current | IDM | 198 | A | TA = 25°C, tp = 10 s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Source Current (Body Diode) | IS | 31.3 | A | 1 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 72 | mJ | TJ = 25°C, IL(pk) = 3 A | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8″ from case for 10 s | 1 | ||
| Junction-to-Case Thermal Resistance, Steady State | RθJC | 4 | °C/W | Steady state | 1 | ||
| Junction-to-Ambient Thermal Resistance, Steady State | RθJA | 47.3 | °C/W | Steady state, surface-mounted on FR4, 650 mm2 2 oz. Cu pad (Note 2) | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VGS = 0 V, VDS = 40 V, TJ = 25 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VGS = 0 V, VDS = 40 V, TJ = 125°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 20 V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.2 | 2.2 | V | VGS = VDS, ID = 30 µA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 6.2 | 7.4 | mΩ | VGS = 10 V, ID = 10 A | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 10 | 12.6 | mΩ | VGS = 4.5 V, ID = 10 A | 2 | |
| Forward Diode Voltage | VSD | 0.9 | 1.2 | V | VGS = 0 V, IS = 10 A, TJ = 25°C | 2 |
CAD (KiCad official)
- Symbol:
NVMFD5C466NLT1G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
nvmfd5c466nlt1g-etched.step/nvmfd5c466nlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvmfd5c466nlt1g.step/nvmfd5c466nlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
a7f30d06acfa56f6, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).