# NVMFD5875NL-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

NVMFD5875NL-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V max, ID 35A at TC=25℃). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V maximum gate-source voltage. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V max, ID 35A at TC=25℃). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V maximum gate-source voltage. |
| 5 | D2 | passive | Drain of MOSFET 2, rated 60V maximum drain-source voltage (tied with pin 6). |
| 6 | D2 | passive | Drain of MOSFET 2, rated 60V maximum drain-source voltage (tied with pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, rated 60V maximum drain-source voltage (tied with pin 8). |
| 8 | D1 | passive | Drain of MOSFET 1, rated 60V maximum drain-source voltage (tied with pin 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 35 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID |  |  | 26 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 180 | A | note1 | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 36 | mJ | note2 | 1 |
| Power Dissipation | PD |  |  | 60 | W | TC = 25℃ | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.5 | ℃/W |  | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 11 | 14 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 14 | 20 | mΩ | VGS=4.5V, ID=10A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 45 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 180 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 2 |
| Input Capacitance | Ciss |  | 930 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 230 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 8 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 22 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Gate-Source Charge | Qgs |  | 4.5 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Gate-Drain (Miller) Charge | Qgd |  | 3.5 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Turn-on Delay Time | td(on) |  | 4.5 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-on Rise Time | tr |  | 2.7 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-off Delay Time | td(off) |  | 13.8 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-off Fall Time | tf |  | 2.7 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 18 |  | ns | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 12 |  | nC | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `NVMFD5875NL-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `nvmfd5875nl-hxy-etched.step` / `nvmfd5875nl-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nvmfd5875nl-hxy.step` / `nvmfd5875nl-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/nvmfd5875nl-hxy-datasheet.pdf) (6 pp, sha256 `a6db7a4869d42427`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nvmfd5875nl-hxy-datasheet.pdf)