component
NVMFD5875NL-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| nvmfd5875nl-hxy-etched.step | 15d ago |
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| nvmfd5875nl-hxy.lbr | 15d ago |
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| README.md | 15d ago |
NVMFD5875NL-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
NVMFD5875NL-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V max, ID 35A at TC=25℃). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V maximum gate-source voltage. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V max, ID 35A at TC=25℃). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V maximum gate-source voltage. |
| 5 | D2 | passive | Drain of MOSFET 2, rated 60V maximum drain-source voltage (tied with pin 6). |
| 6 | D2 | passive | Drain of MOSFET 2, rated 60V maximum drain-source voltage (tied with pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, rated 60V maximum drain-source voltage (tied with pin 8). |
| 8 | D1 | passive | Drain of MOSFET 1, rated 60V maximum drain-source voltage (tied with pin 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | 35 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 26 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 180 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 36 | mJ | note2 | 1 | ||
| Power Dissipation | PD | 60 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.5 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 11 | 14 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 14 | 20 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 45 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 180 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Input Capacitance | Ciss | 930 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 230 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 3.5 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 4.5 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 2.7 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(off) | 13.8 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 2.7 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 18 | ns | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 12 | nC | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
NVMFD5875NL-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
nvmfd5875nl-hxy-etched.step/nvmfd5875nl-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvmfd5875nl-hxy.step/nvmfd5875nl-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
a6db7a4869d42427, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).