component
NVH4L040N120M3S
Public Made by Adomby adom
onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
nvh4l040n120m3s: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
972d89e
29d ago
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"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://www.onsemi.com/pdf/datasheet/nvh4l040n120m3s-d.pdf",
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"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate control input; recommended gate-source operating voltage VGS(op) = -3 to +18 V for TC < 175°C"
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain connection; rated for maximum V(BR)DSS = 1200 V and continuous ID = 54 A at TC = 25°C"
},
{
"number": "3",
"name": "S2",
"type": "power_in",
"description": "Power Source main connection providing source return path for switched current to ground; rated 45 A continuous source current at TC = 25°C"
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{
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"metadata": {
"specs": {
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"Package": "TO-247-4L",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "4"
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"updated_at": "2026-09-25T03:22:41.543Z"
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