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Contents

README

markdown

NVH4L040N120M3S

onsemi · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

NVH4L040N120M3S from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; recommended gate-source operating voltage VGS(op) = -3 to +18 V for TC < 175°C
2 D passive Drain connection; rated for maximum V(BR)DSS = 1200 V and continuous ID = 54 A at TC = 25°C
3 S2 power_in Power Source main connection providing source return path for switched current to ground; rated 45 A continuous source current at TC = 25°C
4 S1 power_in Driver Source connection for gate driver circuit ground reference and current sensing return

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

CAD (KiCad official)

  • Symbol: NVH4L040N120M3S
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: nvh4l040n120m3s-etched.step / nvh4l040n120m3s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvh4l040n120m3s.step / nvh4l040n120m3s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 9a6cb5d99f12a765, retrieved 2026-09-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF