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Ray nvgs5120pt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 454b461 23d ago

NVGS5120PT1G

onsemi · MOSFETs · TSOP-6

NVGS5120PT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DRAIN passive Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS.
2 DRAIN passive Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS.
3 GATE input Gate terminal of the MOSFET; the gate-to-source voltage rating is ±20 V (VGS).
4 SOURCE passive Source terminal of the P-channel MOSFET, the reference terminal for the gate-to-source voltage VGS.
5 DRAIN passive Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS.
6 DRAIN passive Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -60 V 1
Gate-to-Source Voltage VGS 20 V 1
Continuous Drain Current (Note 1, steady state) ID -2.5 A TA = 25°C, steady state 1
Continuous Drain Current (Note 1, steady state) ID -2 A TA = 85°C, steady state 1
Continuous Drain Current (Note 1, t ≤ 5 s) ID -2.9 A t ≤ 5 s, TA = 25°C 1
Continuous Drain Current (Note 2, steady state) ID -1.8 A TA = 25°C, Note 2 minimum pad 1
Continuous Drain Current (Note 2, steady state) ID -1.3 A TA = 85°C, Note 2 minimum pad 1
Power Dissipation (Note 1, steady state) PD 1.1 W TA = 25°C, steady state 1
Power Dissipation (Note 1, t ≤ 5 s) PD 1.4 W t ≤ 5 s, TA = 25°C 1
Power Dissipation (Note 2) PD 0.6 W TA = 25°C, Note 2 minimum pad 1
Pulsed Drain Current IDM -20 A tp = 10 µs 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient – Steady State (Note 3) RθJA 102 °C/W Steady state, 1 in² pad (Note 3) 2
Junction-to-Ambient – t = 5 s (Note 3) RθJA 77.6 °C/W t = 5 s, 1 in² pad (Note 3) 2
Junction-to-Ambient – Steady State (Note 4) RθJA 200 °C/W Steady state, minimum recommended pad (Note 4) 2
Drain-to-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0 V, ID = −250 µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VGS = 0 V, VDS = −48 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS -5 µA VGS = 0 V, VDS = −48 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-to-Source Leakage Current IGSS 200 nA VDS = 0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) -1 -3 V VGS = VDS, ID = −250 µA 2
Drain-to-Source On Resistance RDS(on) 72 111 mΩ VGS = −10 V, ID = −2.9 A 2
Drain-to-Source On Resistance RDS(on) 88 142 mΩ VGS = −4.5 V, ID = −2.5 A 2
Forward Diode Voltage VSD -0.75 -1 V VGS = 0 V, IS = −0.9 A, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NVGS5120PT1G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: nvgs5120pt1g-etched.step / nvgs5120pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvgs5120pt1g.step / nvgs5120pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 53fbfd0491e17613, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF