component
NVGS5120PT1G
Public Made by Adomby adom
onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nvgs5120pt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
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23d ago
NVGS5120PT1G
onsemi · MOSFETs · TSOP-6
NVGS5120PT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 2 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 3 | GATE | input | Gate terminal of the MOSFET; the gate-to-source voltage rating is ±20 V (VGS). |
| 4 | SOURCE | passive | Source terminal of the P-channel MOSFET, the reference terminal for the gate-to-source voltage VGS. |
| 5 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 6 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current (Note 1, steady state) | ID | -2.5 | A | TA = 25°C, steady state | 1 | ||
| Continuous Drain Current (Note 1, steady state) | ID | -2 | A | TA = 85°C, steady state | 1 | ||
| Continuous Drain Current (Note 1, t ≤ 5 s) | ID | -2.9 | A | t ≤ 5 s, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 2, steady state) | ID | -1.8 | A | TA = 25°C, Note 2 minimum pad | 1 | ||
| Continuous Drain Current (Note 2, steady state) | ID | -1.3 | A | TA = 85°C, Note 2 minimum pad | 1 | ||
| Power Dissipation (Note 1, steady state) | PD | 1.1 | W | TA = 25°C, steady state | 1 | ||
| Power Dissipation (Note 1, t ≤ 5 s) | PD | 1.4 | W | t ≤ 5 s, TA = 25°C | 1 | ||
| Power Dissipation (Note 2) | PD | 0.6 | W | TA = 25°C, Note 2 minimum pad | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | tp = 10 µs | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient – Steady State (Note 3) | RθJA | 102 | °C/W | Steady state, 1 in² pad (Note 3) | 2 | ||
| Junction-to-Ambient – t = 5 s (Note 3) | RθJA | 77.6 | °C/W | t = 5 s, 1 in² pad (Note 3) | 2 | ||
| Junction-to-Ambient – Steady State (Note 4) | RθJA | 200 | °C/W | Steady state, minimum recommended pad (Note 4) | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = −250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VGS = 0 V, VDS = −48 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VGS = 0 V, VDS = −48 V, TJ = 125°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 200 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -3 | V | VGS = VDS, ID = −250 µA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 72 | 111 | mΩ | VGS = −10 V, ID = −2.9 A | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 88 | 142 | mΩ | VGS = −4.5 V, ID = −2.5 A | 2 | |
| Forward Diode Voltage | VSD | -0.75 | -1 | V | VGS = 0 V, IS = −0.9 A, TJ = 25°C | 2 |
CAD (KiCad official)
- Symbol:
NVGS5120PT1G - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
nvgs5120pt1g-etched.step/nvgs5120pt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvgs5120pt1g.step/nvgs5120pt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
53fbfd0491e17613, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NVGS5120PT1G
**onsemi** · MOSFETs · TSOP-6
NVGS5120PT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 2 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 3 | GATE | input | Gate terminal of the MOSFET; the gate-to-source voltage rating is ±20 V (VGS). |
| 4 | SOURCE | passive | Source terminal of the P-channel MOSFET, the reference terminal for the gate-to-source voltage VGS. |
| 5 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
| 6 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for −60 V drain-to-source breakdown voltage V(BR)DSS. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | | | V | | 1 |
| Gate-to-Source Voltage | VGS | | | 20 | V | | 1 |
| Continuous Drain Current (Note 1, steady state) | ID | -2.5 | | | A | TA = 25°C, steady state | 1 |
| Continuous Drain Current (Note 1, steady state) | ID | -2 | | | A | TA = 85°C, steady state | 1 |
| Continuous Drain Current (Note 1, t ≤ 5 s) | ID | -2.9 | | | A | t ≤ 5 s, TA = 25°C | 1 |
| Continuous Drain Current (Note 2, steady state) | ID | -1.8 | | | A | TA = 25°C, Note 2 minimum pad | 1 |
| Continuous Drain Current (Note 2, steady state) | ID | -1.3 | | | A | TA = 85°C, Note 2 minimum pad | 1 |
| Power Dissipation (Note 1, steady state) | PD | | | 1.1 | W | TA = 25°C, steady state | 1 |
| Power Dissipation (Note 1, t ≤ 5 s) | PD | | | 1.4 | W | t ≤ 5 s, TA = 25°C | 1 |
| Power Dissipation (Note 2) | PD | | | 0.6 | W | TA = 25°C, Note 2 minimum pad | 1 |
| Pulsed Drain Current | IDM | -20 | | | A | tp = 10 µs | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Ambient – Steady State (Note 3) | RθJA | | | 102 | °C/W | Steady state, 1 in² pad (Note 3) | 2 |
| Junction-to-Ambient – t = 5 s (Note 3) | RθJA | | | 77.6 | °C/W | t = 5 s, 1 in² pad (Note 3) | 2 |
| Junction-to-Ambient – Steady State (Note 4) | RθJA | | | 200 | °C/W | Steady state, minimum recommended pad (Note 4) | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = −250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VGS = 0 V, VDS = −48 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VGS = 0 V, VDS = −48 V, TJ = 125°C | 2 |
| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Gate-to-Source Leakage Current | IGSS | | | 200 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1 | | -3 | V | VGS = VDS, ID = −250 µA | 2 |
| Drain-to-Source On Resistance | RDS(on) | | 72 | 111 | mΩ | VGS = −10 V, ID = −2.9 A | 2 |
| Drain-to-Source On Resistance | RDS(on) | | 88 | 142 | mΩ | VGS = −4.5 V, ID = −2.5 A | 2 |
| Forward Diode Voltage | VSD | | -0.75 | -1 | V | VGS = 0 V, IS = −0.9 A, TJ = 25°C | 2 |
## CAD (KiCad official)
- Symbol: `NVGS5120PT1G`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `nvgs5120pt1g-etched.step` / `nvgs5120pt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nvgs5120pt1g.step` / `nvgs5120pt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588949115477118976) (7 pp, sha256 `53fbfd0491e17613`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nvgs5120pt1g-datasheet.pdf)