component
NVGS5120PT1G
Public Made by Adomby adom
onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nvgs5120pt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -24,6 +24,38 @@ NVGS5120PT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | -60 | | | V | | 1 |+| Gate-to-Source Voltage | VGS | | | 20 | V | | 1 |+| Continuous Drain Current (Note 1, steady state) | ID | -2.5 | | | A | TA = 25°C, steady state | 1 |+| Continuous Drain Current (Note 1, steady state) | ID | -2 | | | A | TA = 85°C, steady state | 1 |+| Continuous Drain Current (Note 1, t ≤ 5 s) | ID | -2.9 | | | A | t ≤ 5 s, TA = 25°C | 1 |+| Continuous Drain Current (Note 2, steady state) | ID | -1.8 | | | A | TA = 25°C, Note 2 minimum pad | 1 |+| Continuous Drain Current (Note 2, steady state) | ID | -1.3 | | | A | TA = 85°C, Note 2 minimum pad | 1 |+| Power Dissipation (Note 1, steady state) | PD | | | 1.1 | W | TA = 25°C, steady state | 1 |+| Power Dissipation (Note 1, t ≤ 5 s) | PD | | | 1.4 | W | t ≤ 5 s, TA = 25°C | 1 |+| Power Dissipation (Note 2) | PD | | | 0.6 | W | TA = 25°C, Note 2 minimum pad | 1 |+| Pulsed Drain Current | IDM | -20 | | | A | tp = 10 µs | 1 |+| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |+| Junction-to-Ambient – Steady State (Note 3) | RθJA | | | 102 | °C/W | Steady state, 1 in² pad (Note 3) | 2 |+| Junction-to-Ambient – t = 5 s (Note 3) | RθJA | | | 77.6 | °C/W | t = 5 s, 1 in² pad (Note 3) | 2 |+| Junction-to-Ambient – Steady State (Note 4) | RθJA | | | 200 | °C/W | Steady state, minimum recommended pad (Note 4) | 2 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = −250 µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VGS = 0 V, VDS = −48 V, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VGS = 0 V, VDS = −48 V, TJ = 125°C | 2 |+| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |+| Gate-to-Source Leakage Current | IGSS | | | 200 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Gate Threshold Voltage | VGS(TH) | -1 | | -3 | V | VGS = VDS, ID = −250 µA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 72 | 111 | mΩ | VGS = −10 V, ID = −2.9 A | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 88 | 142 | mΩ | VGS = −4.5 V, ID = −2.5 A | 2 |+| Forward Diode Voltage | VSD | | -0.75 | -1 | V | VGS = 0 V, IS = −0.9 A, TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `NVGS5120PT1G`
page.json+308−1@@ -166,6 +166,313 @@ "Package": "TSOP-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "53fbfd0491e17613",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.5,+ "typ": null,+ "max": null,+ "conditions": "TA = 25°C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2,+ "typ": null,+ "max": null,+ "conditions": "TA = 85°C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1, t ≤ 5 s)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.9,+ "typ": null,+ "max": null,+ "conditions": "t ≤ 5 s, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 2, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.8,+ "typ": null,+ "max": null,+ "conditions": "TA = 25°C, Note 2 minimum pad",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 2, steady state)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.3,+ "typ": null,+ "max": null,+ "conditions": "TA = 85°C, Note 2 minimum pad",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1, steady state)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "TA = 25°C, steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1, t ≤ 5 s)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.4,+ "conditions": "t ≤ 5 s, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 2)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "TA = 25°C, Note 2 minimum pad",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "tp = 10 µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient – Steady State (Note 3)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 102,+ "conditions": "Steady state, 1 in² pad (Note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient – t = 5 s (Note 3)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 77.6,+ "conditions": "t = 5 s, 1 in² pad (Note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient – Steady State (Note 4)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Steady state, minimum recommended pad (Note 4)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = −250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = 0 V, VDS = −48 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VGS = 0 V, VDS = −48 V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±12 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -3,+ "conditions": "VGS = VDS, ID = −250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 72,+ "max": 111,+ "conditions": "VGS = −10 V, ID = −2.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 88,+ "max": 142,+ "conditions": "VGS = −4.5 V, ID = −2.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.75,+ "max": -1,+ "conditions": "VGS = 0 V, IS = −0.9 A, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -207,4 +514,4 @@ "visibility": { "public": true }-}+}