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NVD5C688NLT4G

Public Made by Adom

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NVD5C688NLT4G

UMW · MOSFETs · TO-252

NVD5C688NLT4G from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE; gate-to-source voltage is rated at ±16 V continuous (absolute maximum ratings, TJ = 25°C).
2 D passive DRAIN; drain-to-source voltage is rated at 60 V (VDSS), with continuous drain current of 17 A at TC = 25°C per the absolute maximum ratings.
3 S passive SOURCE; the datasheet gives a source (body diode) current IS of 20 A, with no separate pin-specific limit stated.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V 1
Gate-to-Source Voltage, Continuous VGS -16 16 V Continuous; printed as ±16 1
Continuous Drain Current ID 17 A TC=25°C, RθJC (Notes 1 & 3) 1
Continuous Drain Current ID 12 A TC=100°C, RθJC 1
Power Dissipation PD 18 W TC=25°C 1
Power Dissipation PD 9 W TC=100°C 1
Continuous Drain Current ID 7 A TA=25°C, steady state, RθJA (Notes 1, 2 & 3) 1
Continuous Drain Current ID 5 A TA=100°C, steady state, RθJA 1
Power Dissipation PD 2.9 W TA=25°C, steady state, RθJA (Notes 1 & 2) 1
Power Dissipation PD 1.45 W TA=100°C, steady state, RθJA 1
Pulsed Drain Current IDM 77 A TA=25°C, tp=10µs 1
Operating Junction and Storage Temperature TJ,TSTG -55 175 °C 1
Source Current (Body Diode) IS 20 A 2
Single Pulse Drain-to-Source Avalanche Energy EAS 48 mJ TJ=25°C, IL(pk)=1A 2
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 2
Junction-to-Case (Drain) Thermal Resistance RθJC 8.05 °C/W Note 1 2
Junction-to-Ambient Thermal Resistance, Steady State RθJA 51.6 °C/W Surface-mounted on FR4, 650 mm² 2 oz Cu pad (Note 2) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250µA 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS=60V, TJ=25°C 3
Zero Gate Voltage Drain Current IDSS 250 µA VDS=60V, TJ=125°C 3
Gate-to-Source Leakage Current IGSS 100 nA VDS=0V, VGS=20V 3
Gate Threshold Voltage VGS(th) 1.2 2.1 V VDS=VGS, ID=15µA 3
Drain-to-Source On Resistance RDS(ON) 28 mΩ VGS=10V, ID=10A 3
Drain-to-Source On Resistance RDS(ON) 30 mΩ VGS=4.5V, ID=10A 3

CAD (KiCad official)

  • Symbol: NVD5C688NLT4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: nvd5c688nlt4g-etched.step / nvd5c688nlt4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nvd5c688nlt4g.step / nvd5c688nlt4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 91947a855dc32347, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF