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Ray Set visibility: public 5359263 22h ago
{
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  "type": "component",
  "slug": "nttfd4d0n04hltwg",
  "title": "NTTFD4D0N04HLTWG",
  "brief": "onsemi MOSFETs, WDFN-12. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "nttfd4d0n04hltwg",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "NTTFD4D0N04HLTWG",
    "manufacturer": "onsemi",
    "package": "WDFN-12",
    "pin_count": 13,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.onsemi.com/pdf/datasheet/nttfd4d0n04hltw-d.pdf",
    "parts": {
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      "model_3d_step_plain": "nttfd4d0n04hltwg.step",
      "lbr": "nttfd4d0n04hltwg.lbr"
    },
    "distributor_links": {
      "lcsc": "C894095",
      "digikey": "488-NTTFD4D0N04HLTWGTR-ND",
      "mouser": "863-NTTFD4D0N04HLTWG"
    },
    "distributor_check": {
      "checked_at": "2026-11-05T21:48:10Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "488-NTTFD4D0N04HLTWGTR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "863-NTTFD4D0N04HLTWG",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "GND (LSS)",
        "type": "power_in",
        "description": "Low-side source of the synchronous MOSFET Q1, tied to ground; pins 1, 11 and 12 share this connection."
      },
      {
        "number": "2",
        "name": "LSG",
        "type": "input",
        "description": "Low-side gate of the synchronous MOSFET Q1, with a gate-to-source rating of ±20 V."
      },
      {
        "number": "3",
        "name": "V+ (HSD)",
        "type": "power_in",
        "description": "High-side drain of the control MOSFET Q2 and the V+ input connection, with a drain-to-source rating of 40 V."
      },
      {
        "number": "4",
        "name": "V+ (HSD)",
        "type": "power_in",
        "description": "High-side drain of the control MOSFET Q2 and the V+ input connection, with a drain-to-source rating of 40 V."
      },
      {
        "number": "5",
        "name": "V+ (HSD)",
        "type": "power_in",
        "description": "High-side drain of the control MOSFET Q2 and the V+ input connection, with a drain-to-source rating of 40 V."
      },
      {
        "number": "6",
        "name": "V+ (HSD)",
        "type": "power_in",
        "description": "High-side drain of the control MOSFET Q2 and the V+ input connection, with a drain-to-source rating of 40 V."
      },
      {
        "number": "7",
        "name": "HSG",
        "type": "input",
        "description": "High-side gate of the control MOSFET Q2, with a gate-to-source rating of ±20 V."
      },
      {
        "number": "8",
        "name": "SW",
        "type": "passive",
        "description": "Switching node, which is the low-side drain of Q1 and is internally connected to the high-side source; pins 8, 9 and 10 share this node."
      },
      {
        "number": "9",
        "name": "SW",
        "type": "passive",
        "description": "Switching node, which is the low-side drain of Q1 and is internally connected to the high-side source; pins 8, 9 and 10 share this node."
      },
      {
        "number": "10",
        "name": "SW",
        "type": "passive",
        "description": "Switching node, which is the low-side drain of Q1 and is internally connected to the high-side source; pins 8, 9 and 10 share this node."
      },
      {
        "number": "11",
        "name": "GND (LSS)",
        "type": "power_in",
        "description": "Low-side source of the synchronous MOSFET Q1, tied to ground; pins 1, 11 and 12 share this connection."
      },
      {
        "number": "12",
        "name": "GND (LSS)",
        "type": "power_in",
        "description": "Low-side source of the synchronous MOSFET Q1, tied to ground; pins 1, 11 and 12 share this connection."
      },
      {
        "number": "13",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The requested package hint is WDFN-12, but the datasheet describes the package as WQFN12 3x3, 0.65P ; The datasheet's pin table gives function names (GND/LSS, LSG, V+/HSD, HSG, SW) but no pin-to-coordin; The ERC pin types are my classification, not stated in the datasheet. The gate pins are input, the G",
          "exposed pad 13 added from the footprint"
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        "pages_sent": 9,
        "cost_usd": 0.0495,
        "at": "2026-11-05T21:47:51"
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      "datasheet": {
        "url": "https://www.onsemi.com/pdf/datasheet/nttfd4d0n04hltw-d.pdf",
        "pages": 9,
        "sha256": "bc880a54daabf264",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 13,
        "described": 13,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "WDFN-12",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "13"
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    "characteristics": {
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          "conditions": "TC = 100°C (Note 4)",
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          "name": "Drain Current, Continuous",
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          "kind": "absolute_maximum",
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          "min": null,
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          "max": 15,
          "conditions": "TA = 25°C (Note 1a, Q1)",
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          "name": "Single Pulse Avalanche Energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 67,
          "conditions": "Note 3: starting TJ = 25°C, L = 1 mH, IAS = 11.6 A, VDD = 40 V, VGS = 10 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation for Single Operation",
          "symbol": "PD",
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          "unit": "W",
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        {
          "name": "Power Dissipation for Single Operation",
          "symbol": "PD",
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          "max": 1.7,
          "conditions": "TA = 25°C (Note 1a, Q1)",
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        },
        {
          "name": "Operating and Storage Junction Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 4.8,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient, max copper",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 70,
          "max": null,
          "conditions": "Note 1a: mounted on 1 in² pad of 2 oz copper",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient, min copper",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 135,
          "max": null,
          "conditions": "Note 1a: mounted on minimum pad of 2 oz copper",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 40,
          "typ": null,
          "max": null,
          "conditions": "ID = 250 A, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 40 V, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-to-Source Leakage Current, Forward",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
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          "conditions": "VGS = +20/−16 V, VDS = 0 V",
          "source_page": 2,
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        {
          "name": "Gate-to-Source Threshold Voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
          "typ": 1.5,
          "max": 2,
          "conditions": "VGS = VDS, ID = 50 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On Resistance",
          "symbol": "rDS(on)",
          "kind": "electrical",
          "unit": "m",
          "min": null,
          "typ": 3.7,
          "max": 4.5,
          "conditions": "VGS = 10 V, ID = 10 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On Resistance",
          "symbol": "rDS(on)",
          "kind": "electrical",
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          "min": null,
          "typ": 5.8,
          "max": 7,
          "conditions": "VGS = 4.5 V, ID = 8 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Source to Drain Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.78,
          "max": 1.2,
          "conditions": "VGS = 0 V, IS = 10 A (Note 2)",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
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  "discovery_pitch": "NTTFD4D0N04HLTWG (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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