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NTRV4101PT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 1mo ago
viewers ntrv4101pt1g: viewers · Ray 1mo ago
ntrv4101pt1g-etched.glb ntrv4101pt1g: factory component page (tier=lcsc) · Ray 1mo ago
ntrv4101pt1g-etched.step ntrv4101pt1g: factory component page (tier=lcsc) · Ray 1mo ago
ntrv4101pt1g-hero.glb ntrv4101pt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
ntrv4101pt1g-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
ntrv4101pt1g.glb Publish 0.1.0 · Ray 1mo ago
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ntrv4101pt1g.kicad_sym Publish 0.1.0 · Ray 1mo ago
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ntrv4101pt1g.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json ntrv4101pt1g: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago
README.md ntrv4101pt1g: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago

NTRV4101PT1G

onsemi · MOSFETs · SOT-23

NTRV4101PT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; the gate-to-source voltage is rated ±8.0 V maximum.
2 Source passive Source of the P-channel MOSFET; the body diode source current IS is rated −2.4 A.
3 Drain passive Drain of the P-channel MOSFET; the drain-to-source voltage is rated −20 V maximum, with continuous drain current ID of −2.4 A at TA = 25°C (steady state, Note 1).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS -20 V 1
Gate-to-Source Voltage VGS -8 8 V 1
Continuous Drain Current (Note 1) ID -2.4 A Steady state, TA = 25°C 1
Continuous Drain Current (Note 1) ID -1.7 A Steady state, TA = 85°C 1
Continuous Drain Current (Note 1) ID -3.2 A t ≤ 10 s, TA = 25°C 1
Continuous Drain Current (Note 2) ID -1.8 A Steady state, TA = 25°C 1
Continuous Drain Current (Note 2) ID -1.3 A Steady state, TA = 85°C 1
Power Dissipation (Note 1) PD 0.73 W Steady state, TA = 25°C 1
Power Dissipation (Note 1) PD 1.25 W t ≤ 10 s 1
Power Dissipation (Note 2) PD 0.42 W TA = 25°C 1
Pulsed Drain Current IDM -18 A tp = 10 s 1
ESD Capability (Note 3) ESD 225 V C = 100 pF, RS = 1500 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS -2.4 A 1
Single Pulse Drain-to-Source Avalanche Energy EAS 16 mJ VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient (Note 1) RJA 170 °C/W Steady state (Note 1) 2
Junction-to-Ambient (Note 1) RJA 100 °C/W t < 10 s (Note 1) 2
Junction-to-Ambient (Note 2) RJA 300 °C/W Steady state (Note 2) 2
Drain-to-Source Breakdown Voltage (Note 4) V(BR)DSS -20 V VGS = 0 V, ID = −250 A 2
Zero Gate Voltage Drain Current (Note 4) IDSS -1 A VGS = 0 V, VDS = −16 V 2
Gate-to-Source Leakage Current IGSS -100 100 nA VGS = ±8.0 V, VDS = 0 V 2
Gate Threshold Voltage (Note 4) VGS(th) -0.4 -0.72 -1.2 V VGS = VDS, ID = −250 A 2
Drain-to-Source On-Resistance RDS(on) 70 85 mΩ VGS = −4.5 V, ID = −1.6 A 2
Drain-to-Source On-Resistance RDS(on) 90 120 mΩ VGS = −2.5 V, ID = −1.3 A 2
Drain-to-Source On-Resistance RDS(on) 112 210 mΩ VGS = −1.8 V, ID = −0.9 A 2
Total Gate Charge QG(tot) 7.5 8.5 nC VGS = −4.5 V, VDS = −10 V, ID = −1.6 A 2
Reverse Recovery Time trr 12.8 15 ns VGS = 0 V, dISD/dt = 100 A/s, IS = −1.6 A 2
Forward Diode Voltage VSD -0.82 -1.2 V VGS = 0 V, IS = −2.4 A 2

CAD (KiCad official)

  • Symbol: NTRV4101PT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntrv4101pt1g-etched.step / ntrv4101pt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntrv4101pt1g.step / ntrv4101pt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 c31733dfb8faabf2, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF