component
NTRV4101PT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTRV4101PT1G
onsemi · MOSFETs · SOT-23
NTRV4101PT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET; the gate-to-source voltage is rated ±8.0 V maximum. |
| 2 | Source | passive | Source of the P-channel MOSFET; the body diode source current IS is rated −2.4 A. |
| 3 | Drain | passive | Drain of the P-channel MOSFET; the drain-to-source voltage is rated −20 V maximum, with continuous drain current ID of −2.4 A at TA = 25°C (steady state, Note 1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current (Note 1) | ID | -2.4 | A | Steady state, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 1) | ID | -1.7 | A | Steady state, TA = 85°C | 1 | ||
| Continuous Drain Current (Note 1) | ID | -3.2 | A | t ≤ 10 s, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 2) | ID | -1.8 | A | Steady state, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 2) | ID | -1.3 | A | Steady state, TA = 85°C | 1 | ||
| Power Dissipation (Note 1) | PD | 0.73 | W | Steady state, TA = 25°C | 1 | ||
| Power Dissipation (Note 1) | PD | 1.25 | W | t ≤ 10 s | 1 | ||
| Power Dissipation (Note 2) | PD | 0.42 | W | TA = 25°C | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | tp = 10 s | 1 | ||
| ESD Capability (Note 3) | ESD | 225 | V | C = 100 pF, RS = 1500 | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | -2.4 | A | 1 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 16 | mJ | VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient (Note 1) | RJA | 170 | °C/W | Steady state (Note 1) | 2 | ||
| Junction-to-Ambient (Note 1) | RJA | 100 | °C/W | t < 10 s (Note 1) | 2 | ||
| Junction-to-Ambient (Note 2) | RJA | 300 | °C/W | Steady state (Note 2) | 2 | ||
| Drain-to-Source Breakdown Voltage (Note 4) | V(BR)DSS | -20 | V | VGS = 0 V, ID = −250 A | 2 | ||
| Zero Gate Voltage Drain Current (Note 4) | IDSS | -1 | A | VGS = 0 V, VDS = −16 V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±8.0 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage (Note 4) | VGS(th) | -0.4 | -0.72 | -1.2 | V | VGS = VDS, ID = −250 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | 70 | 85 | mΩ | VGS = −4.5 V, ID = −1.6 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 90 | 120 | mΩ | VGS = −2.5 V, ID = −1.3 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 112 | 210 | mΩ | VGS = −1.8 V, ID = −0.9 A | 2 | |
| Total Gate Charge | QG(tot) | 7.5 | 8.5 | nC | VGS = −4.5 V, VDS = −10 V, ID = −1.6 A | 2 | |
| Reverse Recovery Time | trr | 12.8 | 15 | ns | VGS = 0 V, dISD/dt = 100 A/s, IS = −1.6 A | 2 | |
| Forward Diode Voltage | VSD | -0.82 | -1.2 | V | VGS = 0 V, IS = −2.4 A | 2 |
CAD (KiCad official)
- Symbol:
NTRV4101PT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ntrv4101pt1g-etched.step/ntrv4101pt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntrv4101pt1g.step/ntrv4101pt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
c31733dfb8faabf2, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).