component
NTRV4101PT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ntrv4101pt1g: specified limits as data (metadata.characteristics, 29 rows from the datasheet)
2 files changed
+392−1
README.md+36@@ -21,6 +21,42 @@ NTRV4101PT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | -20 | | | V | | 1 |+| Gate-to-Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Continuous Drain Current (Note 1) | ID | -2.4 | | | A | Steady state, TA = 25°C | 1 |+| Continuous Drain Current (Note 1) | ID | -1.7 | | | A | Steady state, TA = 85°C | 1 |+| Continuous Drain Current (Note 1) | ID | -3.2 | | | A | t ≤ 10 s, TA = 25°C | 1 |+| Continuous Drain Current (Note 2) | ID | -1.8 | | | A | Steady state, TA = 25°C | 1 |+| Continuous Drain Current (Note 2) | ID | -1.3 | | | A | Steady state, TA = 85°C | 1 |+| Power Dissipation (Note 1) | PD | | | 0.73 | W | Steady state, TA = 25°C | 1 |+| Power Dissipation (Note 1) | PD | | | 1.25 | W | t ≤ 10 s | 1 |+| Power Dissipation (Note 2) | PD | | | 0.42 | W | TA = 25°C | 1 |+| Pulsed Drain Current | IDM | -18 | | | A | tp = 10 s | 1 |+| ESD Capability (Note 3) | ESD | | | 225 | V | C = 100 pF, RS = 1500 | 1 |+| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | -2.4 | | | A | | 1 |+| Single Pulse Drain-to-Source Avalanche Energy | EAS | | | 16 | mJ | VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |+| Junction-to-Ambient (Note 1) | RJA | | | 170 | °C/W | Steady state (Note 1) | 2 |+| Junction-to-Ambient (Note 1) | RJA | | | 100 | °C/W | t < 10 s (Note 1) | 2 |+| Junction-to-Ambient (Note 2) | RJA | | | 300 | °C/W | Steady state (Note 2) | 2 |+| Drain-to-Source Breakdown Voltage (Note 4) | V(BR)DSS | -20 | | | V | VGS = 0 V, ID = −250 A | 2 |+| Zero Gate Voltage Drain Current (Note 4) | IDSS | | | -1 | A | VGS = 0 V, VDS = −16 V | 2 |+| Gate-to-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±8.0 V, VDS = 0 V | 2 |+| Gate Threshold Voltage (Note 4) | VGS(th) | -0.4 | -0.72 | -1.2 | V | VGS = VDS, ID = −250 A | 2 |+| Drain-to-Source On-Resistance | RDS(on) | | 70 | 85 | mΩ | VGS = −4.5 V, ID = −1.6 A | 2 |+| Drain-to-Source On-Resistance | RDS(on) | | 90 | 120 | mΩ | VGS = −2.5 V, ID = −1.3 A | 2 |+| Drain-to-Source On-Resistance | RDS(on) | | 112 | 210 | mΩ | VGS = −1.8 V, ID = −0.9 A | 2 |+| Total Gate Charge | QG(tot) | | 7.5 | 8.5 | nC | VGS = −4.5 V, VDS = −10 V, ID = −1.6 A | 2 |+| Reverse Recovery Time | trr | | 12.8 | 15 | ns | VGS = 0 V, dISD/dt = 100 A/s, IS = −1.6 A | 2 |+| Forward Diode Voltage | VSD | | -0.82 | -1.2 | V | VGS = 0 V, IS = −2.4 A | 2 |+ ## CAD (KiCad official) - Symbol: `NTRV4101PT1G`
page.json+356−1@@ -150,6 +150,361 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c31733dfb8faabf2",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.4,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.7,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 1)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3.2,+ "typ": null,+ "max": null,+ "conditions": "t ≤ 10 s, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 2)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.8,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Note 2)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.3,+ "typ": null,+ "max": null,+ "conditions": "Steady state, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.73,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 1)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "t ≤ 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Note 2)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.42,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -18,+ "typ": null,+ "max": null,+ "conditions": "tp = 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "ESD Capability (Note 3)",+ "symbol": "ESD",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "C = 100 pF, RS = 1500",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.4,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Drain-to-Source Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient (Note 1)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 170,+ "conditions": "Steady state (Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient (Note 1)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "t < 10 s (Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient (Note 2)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady state (Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage (Note 4)",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = −250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (Note 4)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = 0 V, VDS = −16 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ±8.0 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (Note 4)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": -0.72,+ "max": -1.2,+ "conditions": "VGS = VDS, ID = −250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 70,+ "max": 85,+ "conditions": "VGS = −4.5 V, ID = −1.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 90,+ "max": 120,+ "conditions": "VGS = −2.5 V, ID = −1.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 112,+ "max": 210,+ "conditions": "VGS = −1.8 V, ID = −0.9 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "QG(tot)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7.5,+ "max": 8.5,+ "conditions": "VGS = −4.5 V, VDS = −10 V, ID = −1.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12.8,+ "max": 15,+ "conditions": "VGS = 0 V, dISD/dt = 100 A/s, IS = −1.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.82,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = −2.4 A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +546,4 @@ "visibility": { "public": true }-}+}