# NTR4503NT1G

**onsemi** · MOSFETs · SOT-23

NTR4503NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS). |
| 2 | Source | passive | Source terminal; the body diode source current is rated 2.0 A continuous, with peak source current 4.0 A for tp = 10 s. |
| 3 | Drain | passive | Drain terminal; the drain-to-source voltage is rated 30 V (VDSS), with continuous drain current 2.0 A at TA = 25°C steady state and 10 A pulsed (tp = 10 s). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 30 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 2 | A | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 1.5 | A | Steady state, TA = 85°C | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 2.5 | A | t ≤ 10 s, TA = 25°C | 1 |
| Power Dissipation (Note 1) | PD |  |  | 0.73 | W | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID |  |  | 1.5 | A | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID |  |  | 1.1 | A | Steady state, TA = 85°C | 1 |
| Power Dissipation (Note 2) | PD |  |  | 0.42 | W | TA = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 10 | A | tp = 10 s | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Source Current (Body Diode) | IS |  |  | 2 | A |  | 1 |
| Peak Source Current (Diode Forward) | ISM |  |  | 4 | A | tp = 10 s | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Ambient, Steady State (Note 1) | RθJA |  |  | 170 | °C/W | Steady state, surface-mounted on FR4, 1 in² pad (Note 1) | 2 |
| Junction-to-Ambient, t < 10 s (Note 1) | RθJA |  |  | 100 | °C/W | t < 10 s, surface-mounted on FR4, 1 in² pad (Note 1) | 2 |
| Junction-to-Ambient, Steady State (Note 2) | RθJA |  |  | 300 | °C/W | Steady state, surface-mounted on FR4, minimum recommended pad (Note 2) | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | 36 |  | V | VGS = 0 V, ID = 250 A | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | A | VGS = 0 V, VDS = 24 V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | A | VGS = 0 V, VDS = 24 V, TJ = 125°C | 3 |
| Gate-to-Source Leakage Current | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = 20 V | 3 |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.75 | 3 | V | VGS = VDS, ID = 250 A | 3 |
| Drain-to-Source On-Resistance | RDS(on) |  | 85 | 110 | mΩ | VGS = 10 V, ID = 2.5 A | 3 |
| Drain-to-Source On-Resistance | RDS(on) |  | 105 | 140 | mΩ | VGS = 4.5 V, ID = 2.0 A | 3 |
| Total Gate Charge | QG(TOT) |  | 3.6 | 7 | nC | VGS = 10 V, VDS = 15 V, ID = 2.5 A | 3 |
| Input Capacitance | Ciss |  | 130 | 250 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 24 V | 3 |
| Output Capacitance | Coss |  | 42 | 75 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 24 V | 3 |
| Reverse Transfer Capacitance | Crss |  | 13 | 25 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 24 V | 3 |
| Turn-On Delay Time | td(on) |  | 5.8 | 12 | ns | VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 | 3 |
| Rise Time | tr |  | 5.8 | 10 | ns | VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 | 3 |
| Turn-Off Delay Time | td(off) |  | 14 | 25 | ns | VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 | 3 |
| Fall Time | tf |  | 1.6 | 5 | ns | VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 | 3 |
| Forward Diode Voltage | VSD |  | 0.85 | 1.2 | V | VGS = 0 V, IS = 2.0 A | 3 |

## CAD (KiCad official)

- Symbol: `NTR4503NT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ntr4503nt1g-etched.step` / `ntr4503nt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntr4503nt1g.step` / `ntr4503nt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586186911606591488) (7 pp, sha256 `f90aa81d51981d79`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntr4503nt1g-datasheet.pdf)