component

NTR4503NT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsntr4503nt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 24d ago
viewers ntr4503nt1g: viewers · Ray 24d ago
ntr4503nt1g-etched.glb ntr4503nt1g: factory component page (tier=lcsc) · Ray 24d ago
ntr4503nt1g-etched.step ntr4503nt1g: factory component page (tier=lcsc) · Ray 24d ago
ntr4503nt1g-hero.glb ntr4503nt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
ntr4503nt1g-hero.overlay.json Publish 0.1.0 · Ray 24d ago
ntr4503nt1g.glb Publish 0.1.0 · Ray 24d ago
ntr4503nt1g.kicad_mod Publish 0.1.0 · Ray 24d ago
ntr4503nt1g.kicad_sym Publish 0.1.0 · Ray 24d ago
ntr4503nt1g.lbr Publish 0.1.0 · Ray 24d ago
ntr4503nt1g.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json ntr4503nt1g: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago
README.md ntr4503nt1g: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago

NTR4503NT1G

onsemi · MOSFETs · SOT-23

NTR4503NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS).
2 Source passive Source terminal; the body diode source current is rated 2.0 A continuous, with peak source current 4.0 A for tp = 10 s.
3 Drain passive Drain terminal; the drain-to-source voltage is rated 30 V (VDSS), with continuous drain current 2.0 A at TA = 25°C steady state and 10 A pulsed (tp = 10 s).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (Note 1) ID 2 A Steady state, TA = 25°C 1
Continuous Drain Current (Note 1) ID 1.5 A Steady state, TA = 85°C 1
Continuous Drain Current (Note 1) ID 2.5 A t ≤ 10 s, TA = 25°C 1
Power Dissipation (Note 1) PD 0.73 W Steady state, TA = 25°C 1
Continuous Drain Current (Note 2) ID 1.5 A Steady state, TA = 25°C 1
Continuous Drain Current (Note 2) ID 1.1 A Steady state, TA = 85°C 1
Power Dissipation (Note 2) PD 0.42 W TA = 25°C 1
Pulsed Drain Current IDM 10 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Source Current (Body Diode) IS 2 A 1
Peak Source Current (Diode Forward) ISM 4 A tp = 10 s 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient, Steady State (Note 1) RθJA 170 °C/W Steady state, surface-mounted on FR4, 1 in² pad (Note 1) 2
Junction-to-Ambient, t < 10 s (Note 1) RθJA 100 °C/W t < 10 s, surface-mounted on FR4, 1 in² pad (Note 1) 2
Junction-to-Ambient, Steady State (Note 2) RθJA 300 °C/W Steady state, surface-mounted on FR4, minimum recommended pad (Note 2) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 30 36 V VGS = 0 V, ID = 250 A 3
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 24 V 3
Zero Gate Voltage Drain Current IDSS 10 A VGS = 0 V, VDS = 24 V, TJ = 125°C 3
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = 20 V 3
Gate Threshold Voltage VGS(TH) 1 1.75 3 V VGS = VDS, ID = 250 A 3
Drain-to-Source On-Resistance RDS(on) 85 110 mΩ VGS = 10 V, ID = 2.5 A 3
Drain-to-Source On-Resistance RDS(on) 105 140 mΩ VGS = 4.5 V, ID = 2.0 A 3
Total Gate Charge QG(TOT) 3.6 7 nC VGS = 10 V, VDS = 15 V, ID = 2.5 A 3
Input Capacitance Ciss 130 250 pF VGS = 0 V, f = 1.0 MHz, VDS = 24 V 3
Output Capacitance Coss 42 75 pF VGS = 0 V, f = 1.0 MHz, VDS = 24 V 3
Reverse Transfer Capacitance Crss 13 25 pF VGS = 0 V, f = 1.0 MHz, VDS = 24 V 3
Turn-On Delay Time td(on) 5.8 12 ns VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 3
Rise Time tr 5.8 10 ns VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 3
Turn-Off Delay Time td(off) 14 25 ns VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 3
Fall Time tf 1.6 5 ns VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 3
Forward Diode Voltage VSD 0.85 1.2 V VGS = 0 V, IS = 2.0 A 3

CAD (KiCad official)

  • Symbol: NTR4503NT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr4503nt1g-etched.step / ntr4503nt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4503nt1g.step / ntr4503nt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 f90aa81d51981d79, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF