component
NTR4170NT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ntr4170nt1g: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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16d ago
NTR4170NT1G
onsemi · MOSFETs · SOT-23
NTR4170NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the gate-to-source voltage is rated at ±12 V maximum (VGS). |
| 2 | Source | passive | Source of the N-channel MOSFET; the device source (body diode) current IS is rated at 0.82 A maximum. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V (VDSS) with continuous drain current ID of 2.4 A at TA = 25°C steady state. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current, steady state | ID | 2.4 | A | TA = 25°C, steady state (Note 1) | 1 | ||
| Continuous Drain Current, t ≤ 30 s | ID | 3.1 | A | TA = 25°C, t ≤ 30 s | 1 | ||
| Continuous Drain Current, t ≤ 10 s | ID | 3.9 | A | TA = 25°C, t ≤ 10 s | 1 | ||
| Continuous Drain Current, steady state | ID | 1.7 | A | TA = 85°C, steady state | 1 | ||
| Continuous Drain Current, t ≤ 30 s | ID | 2.3 | A | TA = 85°C, t ≤ 30 s | 1 | ||
| Continuous Drain Current, t ≤ 10 s | ID | 2.8 | A | TA = 85°C, t ≤ 10 s | 1 | ||
| Power Dissipation, steady state | PD | 0.48 | W | TA = 25°C, steady state (Note 1) | 1 | ||
| Power Dissipation, t ≤ 30 s | PD | 0.82 | W | TA = 25°C, t ≤ 30 s | 1 | ||
| Power Dissipation, t ≤ 10 s | PD | 1.25 | W | t ≤ 10 s (Note 1) | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | tp = 10 µs | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | 0.82 | A | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient, steady state | RθJA | 260 | °C/W | Steady state (Note 1) | 1 | ||
| Junction-to-Ambient, t ≤ 30 s | RθJA | 153 | °C/W | t ≤ 30 s | 1 | ||
| Junction-to-Ambient, t < 10 s | RθJA | 100 | °C/W | t < 10 s (Note 1) | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VGS = 0 V, VDS = 24 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VGS = 0 V, VDS = 24 V, TJ = 125°C | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.6 | 1 | 1.4 | V | VGS = VDS, ID = 250 µA | 2 |
| Drain-to-Source On-Resistance | RDS(on) | 45 | 55 | mΩ | VGS = 10 V, ID = 3.2 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 50 | 70 | mΩ | VGS = 4.5 V, ID = 2.8 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 64 | 110 | mΩ | VGS = 2.5 V, ID = 2.0 A | 2 |
CAD (KiCad official)
- Symbol:
NTR4170NT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ntr4170nt1g-etched.step/ntr4170nt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntr4170nt1g.step/ntr4170nt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
cd396ead9b9f3612, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTR4170NT1G
**onsemi** · MOSFETs · SOT-23
NTR4170NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the gate-to-source voltage is rated at ±12 V maximum (VGS). |
| 2 | Source | passive | Source of the N-channel MOSFET; the device source (body diode) current IS is rated at 0.82 A maximum. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V (VDSS) with continuous drain current ID of 2.4 A at TA = 25°C steady state. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current, steady state | ID | | | 2.4 | A | TA = 25°C, steady state (Note 1) | 1 |
| Continuous Drain Current, t ≤ 30 s | ID | | | 3.1 | A | TA = 25°C, t ≤ 30 s | 1 |
| Continuous Drain Current, t ≤ 10 s | ID | | | 3.9 | A | TA = 25°C, t ≤ 10 s | 1 |
| Continuous Drain Current, steady state | ID | | | 1.7 | A | TA = 85°C, steady state | 1 |
| Continuous Drain Current, t ≤ 30 s | ID | | | 2.3 | A | TA = 85°C, t ≤ 30 s | 1 |
| Continuous Drain Current, t ≤ 10 s | ID | | | 2.8 | A | TA = 85°C, t ≤ 10 s | 1 |
| Power Dissipation, steady state | PD | | | 0.48 | W | TA = 25°C, steady state (Note 1) | 1 |
| Power Dissipation, t ≤ 30 s | PD | | | 0.82 | W | TA = 25°C, t ≤ 30 s | 1 |
| Power Dissipation, t ≤ 10 s | PD | | | 1.25 | W | t ≤ 10 s (Note 1) | 1 |
| Pulsed Drain Current | IDM | | | 8 | A | tp = 10 µs | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Source Current (Body Diode) | IS | | | 0.82 | A | | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Ambient, steady state | RθJA | | | 260 | °C/W | Steady state (Note 1) | 1 |
| Junction-to-Ambient, t ≤ 30 s | RθJA | | | 153 | °C/W | t ≤ 30 s | 1 |
| Junction-to-Ambient, t < 10 s | RθJA | | | 100 | °C/W | t < 10 s (Note 1) | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 24 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VGS = 0 V, VDS = 24 V, TJ = 125°C | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.6 | 1 | 1.4 | V | VGS = VDS, ID = 250 µA | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 45 | 55 | mΩ | VGS = 10 V, ID = 3.2 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 50 | 70 | mΩ | VGS = 4.5 V, ID = 2.8 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 64 | 110 | mΩ | VGS = 2.5 V, ID = 2.0 A | 2 |
## CAD (KiCad official)
- Symbol: `NTR4170NT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ntr4170nt1g-etched.step` / `ntr4170nt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntr4170nt1g.step` / `ntr4170nt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588886669173411840) (5 pp, sha256 `cd396ead9b9f3612`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntr4170nt1g-datasheet.pdf)