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Contents

README

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NTR4170NT1G

onsemi · MOSFETs · SOT-23

NTR4170NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; the gate-to-source voltage is rated at ±12 V maximum (VGS).
2 Source passive Source of the N-channel MOSFET; the device source (body diode) current IS is rated at 0.82 A maximum.
3 Drain passive Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V (VDSS) with continuous drain current ID of 2.4 A at TA = 25°C steady state.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -12 12 V 1
Continuous Drain Current, steady state ID 2.4 A TA = 25°C, steady state (Note 1) 1
Continuous Drain Current, t ≤ 30 s ID 3.1 A TA = 25°C, t ≤ 30 s 1
Continuous Drain Current, t ≤ 10 s ID 3.9 A TA = 25°C, t ≤ 10 s 1
Continuous Drain Current, steady state ID 1.7 A TA = 85°C, steady state 1
Continuous Drain Current, t ≤ 30 s ID 2.3 A TA = 85°C, t ≤ 30 s 1
Continuous Drain Current, t ≤ 10 s ID 2.8 A TA = 85°C, t ≤ 10 s 1
Power Dissipation, steady state PD 0.48 W TA = 25°C, steady state (Note 1) 1
Power Dissipation, t ≤ 30 s PD 0.82 W TA = 25°C, t ≤ 30 s 1
Power Dissipation, t ≤ 10 s PD 1.25 W t ≤ 10 s (Note 1) 1
Pulsed Drain Current IDM 8 A tp = 10 µs 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Source Current (Body Diode) IS 0.82 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient, steady state RθJA 260 °C/W Steady state (Note 1) 1
Junction-to-Ambient, t ≤ 30 s RθJA 153 °C/W t ≤ 30 s 1
Junction-to-Ambient, t < 10 s RθJA 100 °C/W t < 10 s (Note 1) 1
Zero Gate Voltage Drain Current IDSS 1 µA VGS = 0 V, VDS = 24 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 5 µA VGS = 0 V, VDS = 24 V, TJ = 125°C 2
Gate Threshold Voltage VGS(TH) 0.6 1 1.4 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On-Resistance RDS(on) 45 55 mΩ VGS = 10 V, ID = 3.2 A 2
Drain-to-Source On-Resistance RDS(on) 50 70 mΩ VGS = 4.5 V, ID = 2.8 A 2
Drain-to-Source On-Resistance RDS(on) 64 110 mΩ VGS = 2.5 V, ID = 2.0 A 2

CAD (KiCad official)

  • Symbol: NTR4170NT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr4170nt1g-etched.step / ntr4170nt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4170nt1g.step / ntr4170nt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 cd396ead9b9f3612, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF