component

NTR4003NT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray ntr4003nt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 21dd428 27d ago

NTR4003NT1G

onsemi · MOSFETs · SOT-23

NTR4003NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with 0.8−1.4 V threshold voltage and ±20 V gate-to-source voltage maximum
2 Source power_in Source terminal and substrate reference rated for 1.0 A body diode current
3 Drain passive Drain terminal rated for 30 V maximum drain-to-source voltage and 0.56 A continuous drain current (t < 10s)

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (Steady State) ID 0.5 A Steady State, TA = 25°C (Note 1) 1
Continuous Drain Current (Steady State) ID 0.37 A Steady State, TA = 85°C (Note 1) 1
Power Dissipation (Steady State) PD 0.69 W Steady State (Note 1) 1
Continuous Drain Current (t < 10 s) ID 0.56 A t < 10 s, TA = 25°C (Note 1) 1
Continuous Drain Current (t < 10 s) ID 0.4 A t < 10 s, TA = 85°C (Note 1) 1
Power Dissipation (t < 5 s) PD 0.83 W t < 5 s (Note 1) 1
Pulsed Drain Current IDM 1.7 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Source Current (Body Diode) IS 1 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 inch from case for 10 s 1
Junction-to-Ambient Thermal Resistance (Steady State) RJA 180 °C/W Steady State (Note 1) 1
Junction-to-Ambient Thermal Resistance (t < 10 s) RJA 150 °C/W t < 10 s (Note 1) 1
Junction-to-Ambient Thermal Resistance (Steady State) RJA 300 °C/W Steady State (Note 2) 1
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 100 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VGS = 0 V, VDS = 30 V, TJ = 25°C 2
Gate-to-Source Leakage Current IGSS -1 1 µA VDS = 0 V, VGS = ±10 V 2
Gate Threshold Voltage VGS(TH) 0.8 1.4 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 1 1.5 Ω VGS = 4.0 V, ID = 10 mA 2
Drain-to-Source On Resistance RDS(on) 1.5 2 Ω VGS = 2.5 V, ID = 10 mA 2
Input Capacitance Ciss 21 42 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Output Capacitance Coss 19.7 40 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Reverse Transfer Capacitance Crss 8.1 16 pF VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 2
Forward Diode Voltage VSD 0.65 0.7 V VGS = 0 V, IS = 10 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NTR4003NT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ntr4003nt1g-etched.step / ntr4003nt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntr4003nt1g.step / ntr4003nt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 186344027384aaab, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF