component
NTR4003NT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ntr4003nt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -21,6 +21,38 @@ NTR4003NT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 30 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (Steady State) | ID | | | 0.5 | A | Steady State, TA = 25°C (Note 1) | 1 |+| Continuous Drain Current (Steady State) | ID | | | 0.37 | A | Steady State, TA = 85°C (Note 1) | 1 |+| Power Dissipation (Steady State) | PD | | | 0.69 | W | Steady State (Note 1) | 1 |+| Continuous Drain Current (t < 10 s) | ID | | | 0.56 | A | t < 10 s, TA = 25°C (Note 1) | 1 |+| Continuous Drain Current (t < 10 s) | ID | | | 0.4 | A | t < 10 s, TA = 85°C (Note 1) | 1 |+| Power Dissipation (t < 5 s) | PD | | | 0.83 | W | t < 5 s (Note 1) | 1 |+| Pulsed Drain Current | IDM | | | 1.7 | A | tp = 10 s | 1 |+| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | | | 1 | A | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 inch from case for 10 s | 1 |+| Junction-to-Ambient Thermal Resistance (Steady State) | RJA | | | 180 | °C/W | Steady State (Note 1) | 1 |+| Junction-to-Ambient Thermal Resistance (t < 10 s) | RJA | | | 150 | °C/W | t < 10 s (Note 1) | 1 |+| Junction-to-Ambient Thermal Resistance (Steady State) | RJA | | | 300 | °C/W | Steady State (Note 2) | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 100 µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 30 V, TJ = 25°C | 2 |+| Gate-to-Source Leakage Current | IGSS | -1 | | 1 | µA | VDS = 0 V, VGS = ±10 V | 2 |+| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.4 | | V | VGS = VDS, ID = 250 µA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 1 | 1.5 | Ω | VGS = 4.0 V, ID = 10 mA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 1.5 | 2 | Ω | VGS = 2.5 V, ID = 10 mA | 2 |+| Input Capacitance | Ciss | | 21 | 42 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 |+| Output Capacitance | Coss | | 19.7 | 40 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 |+| Reverse Transfer Capacitance | Crss | | 8.1 | 16 | pF | VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V | 2 |+| Forward Diode Voltage | VSD | | 0.65 | 0.7 | V | VGS = 0 V, IS = 10 mA, TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `NTR4003NT1G`
page.json+307@@ -133,6 +133,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "186344027384aaab",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Steady State)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "Steady State, TA = 25°C (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Steady State)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.37,+ "conditions": "Steady State, TA = 85°C (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (Steady State)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.69,+ "conditions": "Steady State (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (t < 10 s)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.56,+ "conditions": "t < 10 s, TA = 25°C (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (t < 10 s)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "t < 10 s, TA = 85°C (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (t < 5 s)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.83,+ "conditions": "t < 5 s (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.7,+ "conditions": "tp = 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 inch from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance (Steady State)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "Steady State (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance (t < 10 s)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "t < 10 s (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance (Steady State)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady State (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 100 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 30 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -1,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 0 V, VGS = ±10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.8,+ "typ": 1.4,+ "max": null,+ "conditions": "VGS = VDS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1,+ "max": 1.5,+ "conditions": "VGS = 4.0 V, ID = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.5,+ "max": 2,+ "conditions": "VGS = 2.5 V, ID = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 21,+ "max": 42,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 19.7,+ "max": 40,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 8.1,+ "max": 16,+ "conditions": "VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.65,+ "max": 0.7,+ "conditions": "VGS = 0 V, IS = 10 mA, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],