# NTR1P02T1G

**onsemi** · MOSFETs · SOT-23

NTR1P02T1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of the P-channel MOSFET; the gate-to-source voltage is rated at ±20 V continuous. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-to-source voltage of −20 V and a continuous drain current of −1.0 A at TA = 25°C. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; total power dissipation is 400 mW at TA = 25°C and the junction-to-ambient thermal resistance is 300 °C/W. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 |  |  | V |  | 1 |
| Gate-to-Source Voltage - Continuous | VGS | -20 |  | 20 | V | Continuous | 1 |
| Drain Current - Continuous | ID | -1 |  |  | A | TA = 25°C | 1 |
| Pulsed Drain Current | IDM | -2.67 |  |  | A | tp ≤ 1 s | 1 |
| Total Power Dissipation | PD |  |  | 400 | mW | TA = 25°C | 1 |
| Operating and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RJA |  |  | 300 | °C/W | Junction-to-Ambient | 1 |
| Maximum Lead Temperature for Soldering Purposes | TL |  |  | 260 | °C | 1/8″ from case for 10 s | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 |  |  | V | VGS = 0 V, ID = −10 A | 2 |
| Zero Gate Voltage Drain Current (TJ = 25°C) | IDSS |  |  | -1 | A | VDS = −20 V, VGS = 0 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current (TJ = 150°C) | IDSS |  |  | -10 | A | VDS = −20 V, VGS = 0 V, TJ = 150°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.9 | -2.3 | V | VDS = VGS, ID = −250 A | 2 |
| Static Drain-to-Source On-State Resistance (VGS = −10 V) | RDS(on) |  | 0.148 | 0.18 | Ω | VGS = −10 V, ID = −1.5 A | 2 |
| Static Drain-to-Source On-State Resistance (VGS = −4.5 V) | RDS(on) |  | 0.235 | 0.28 | Ω | VGS = −4.5 V, ID = −0.75 A | 2 |
| Diode Forward On-Voltage | VSD |  | -0.8 | -1 | V | IS = −0.6 A, VGS = 0 V | 2 |

## CAD (KiCad official)

- Symbol: `NTR1P02T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ntr1p02t1g-etched.step` / `ntr1p02t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntr1p02t1g.step` / `ntr1p02t1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8558255403710128128) (6 pp, sha256 `063fef97f5de7e0d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntr1p02t1g-datasheet.pdf)