component
NTR1P02T1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNTR1P02T1G
onsemi · MOSFETs · SOT-23
NTR1P02T1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of the P-channel MOSFET; the gate-to-source voltage is rated at ±20 V continuous. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-to-source voltage of −20 V and a continuous drain current of −1.0 A at TA = 25°C. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; total power dissipation is 400 mW at TA = 25°C and the junction-to-ambient thermal resistance is 300 °C/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-to-Source Voltage - Continuous | VGS | -20 | 20 | V | Continuous | 1 | |
| Drain Current - Continuous | ID | -1 | A | TA = 25°C | 1 | ||
| Pulsed Drain Current | IDM | -2.67 | A | tp ≤ 1 s | 1 | ||
| Total Power Dissipation | PD | 400 | mW | TA = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 300 | °C/W | Junction-to-Ambient | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8″ from case for 10 s | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0 V, ID = −10 A | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 25°C) | IDSS | -1 | A | VDS = −20 V, VGS = 0 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 150°C) | IDSS | -10 | A | VDS = −20 V, VGS = 0 V, TJ = 150°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.9 | -2.3 | V | VDS = VGS, ID = −250 A | 2 |
| Static Drain-to-Source On-State Resistance (VGS = −10 V) | RDS(on) | 0.148 | 0.18 | Ω | VGS = −10 V, ID = −1.5 A | 2 | |
| Static Drain-to-Source On-State Resistance (VGS = −4.5 V) | RDS(on) | 0.235 | 0.28 | Ω | VGS = −4.5 V, ID = −0.75 A | 2 | |
| Diode Forward On-Voltage | VSD | -0.8 | -1 | V | IS = −0.6 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
NTR1P02T1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ntr1p02t1g-etched.step/ntr1p02t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntr1p02t1g.step/ntr1p02t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
063fef97f5de7e0d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).