component
NTMFSC0D9N04CL
Public Made by Adomby adom
onsemi MOSFETs, DFN-8(5.1x6.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTMFSC0D9N04CL
onsemi · MOSFETs · DFN-8(5.1x6.2)
NTMFSC0D9N04CL from onsemi, in a DFN-8(5.1x6.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; VDSS is 40 V and body-diode source current IS is 169 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected internally to the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected internally to the other source pins. |
| 4 | G | input | Gate terminal; gate-to-source voltage rating is ±20 V with threshold of 1.2 to 2.0 V. |
| 5 | D | passive | Drain terminal; continuous drain current is 313 A at TC = 25°C, with a 40 V drain-to-source rating. |
| 6 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 7 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 8 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DFN-8(5.1x6.2) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VGS = 0 V, VDS = 40 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | TJ = 125°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 20 V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.2 | 2 | V | VGS = VDS, ID = 250 µA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.65 | 0.85 | mΩ | VGS = 10 V, ID = 50 A | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 1 | 1.3 | mΩ | VGS = 4.5 V, ID = 50 A | 2 | |
| Forward Diode Voltage | VSD | 0.75 | 1.2 | V | VGS = 0 V, IS = 50 A, TJ = 25°C | 2 | |
| Drain-to-Source Voltage | VDSS | 40 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (RθJC, steady state) | ID | 313 | A | RθJC (Note 2), steady state, TC = 25°C | 1 | ||
| Power Dissipation (RθJC) | PD | 167 | W | RθJC (Note 2) | 1 | ||
| Continuous Drain Current (RθJA, steady state) | ID | 49.5 | A | RθJA (Note 1, 2), steady state, TA = 25°C | 1 | ||
| Power Dissipation (RθJA) | PD | 3.8 | W | RθJA (Note 1, 2) | 1 | ||
| Pulsed Drain Current | IDM | 900 | A | TA = 25°C, tp = 10 µs | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Source Current (Body Diode) | IS | 169 | A | 1 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 706 | mJ | IL(pk) = 29 A | 1 | ||
| Lead Temperature Soldering Reflow | TL | 300 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Case Thermal Resistance, Steady State | RθJC | 0.9 | °C/W | Steady state (Note 3) | 2 | ||
| Junction-to-Ambient Thermal Resistance, Steady State | RθJA | 39 | °C/W | Steady state (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
NTMFSC0D9N04CL - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5.1x6.2) (KiCad packages3D, STEP)
- 3D model files:
ntmfsc0d9n04cl-etched.step/ntmfsc0d9n04cl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmfsc0d9n04cl.step/ntmfsc0d9n04cl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
9054954c14be44e4, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTMFSC0D9N04CL
**onsemi** · MOSFETs · DFN-8(5.1x6.2)
NTMFSC0D9N04CL from onsemi, in a DFN-8(5.1x6.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; VDSS is 40 V and body-diode source current IS is 169 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected internally to the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected internally to the other source pins. |
| 4 | G | input | Gate terminal; gate-to-source voltage rating is ±20 V with threshold of 1.2 to 2.0 V. |
| 5 | D | passive | Drain terminal; continuous drain current is 313 A at TC = 25°C, with a 40 V drain-to-source rating. |
| 6 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 7 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 8 | D | passive | Drain terminal, connected internally to the other drain pins. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DFN-8(5.1x6.2) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VGS = 0 V, VDS = 40 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | µA | TJ = 125°C | 2 |
| Gate-to-Source Leakage Current | IGSS | | | 100 | nA | VDS = 0 V, VGS = 20 V | 2 |
| Gate Threshold Voltage | VGS(TH) | 1.2 | | 2 | V | VGS = VDS, ID = 250 µA | 2 |
| Drain-to-Source On Resistance | RDS(on) | | 0.65 | 0.85 | mΩ | VGS = 10 V, ID = 50 A | 2 |
| Drain-to-Source On Resistance | RDS(on) | | 1 | 1.3 | mΩ | VGS = 4.5 V, ID = 50 A | 2 |
| Forward Diode Voltage | VSD | | 0.75 | 1.2 | V | VGS = 0 V, IS = 50 A, TJ = 25°C | 2 |
| Drain-to-Source Voltage | VDSS | | | 40 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (RθJC, steady state) | ID | | | 313 | A | RθJC (Note 2), steady state, TC = 25°C | 1 |
| Power Dissipation (RθJC) | PD | | | 167 | W | RθJC (Note 2) | 1 |
| Continuous Drain Current (RθJA, steady state) | ID | | | 49.5 | A | RθJA (Note 1, 2), steady state, TA = 25°C | 1 |
| Power Dissipation (RθJA) | PD | | | 3.8 | W | RθJA (Note 1, 2) | 1 |
| Pulsed Drain Current | IDM | | | 900 | A | TA = 25°C, tp = 10 µs | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Source Current (Body Diode) | IS | | | 169 | A | | 1 |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | | | 706 | mJ | IL(pk) = 29 A | 1 |
| Lead Temperature Soldering Reflow | TL | | | 300 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Case Thermal Resistance, Steady State | RθJC | | | 0.9 | °C/W | Steady state (Note 3) | 2 |
| Junction-to-Ambient Thermal Resistance, Steady State | RθJA | | | 39 | °C/W | Steady state (Note 3) | 2 |
## CAD (KiCad official)
- Symbol: `NTMFSC0D9N04CL`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5.1x6.2) (KiCad packages3D, STEP)
- 3D model files: `ntmfsc0d9n04cl-etched.step` / `ntmfsc0d9n04cl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntmfsc0d9n04cl.step` / `ntmfsc0d9n04cl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917895053119488) (7 pp, sha256 `9054954c14be44e4`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntmfsc0d9n04cl-datasheet.pdf)