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NTMFSC0D9N04CL

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onsemi MOSFETs, DFN-8(5.1x6.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTMFSC0D9N04CL

onsemi · MOSFETs · DFN-8(5.1x6.2)

NTMFSC0D9N04CL from onsemi, in a DFN-8(5.1x6.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; VDSS is 40 V and body-diode source current IS is 169 A.
2 S passive Source terminal of the N-channel MOSFET, connected internally to the other source pins.
3 S passive Source terminal of the N-channel MOSFET, connected internally to the other source pins.
4 G input Gate terminal; gate-to-source voltage rating is ±20 V with threshold of 1.2 to 2.0 V.
5 D passive Drain terminal; continuous drain current is 313 A at TC = 25°C, with a 40 V drain-to-source rating.
6 D passive Drain terminal, connected internally to the other drain pins.
7 D passive Drain terminal, connected internally to the other drain pins.
8 D passive Drain terminal, connected internally to the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer onsemi
Package DFN-8(5.1x6.2)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VGS = 0 V, VDS = 40 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 100 µA TJ = 125°C 2
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = 20 V 2
Gate Threshold Voltage VGS(TH) 1.2 2 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 0.65 0.85 mΩ VGS = 10 V, ID = 50 A 2
Drain-to-Source On Resistance RDS(on) 1 1.3 mΩ VGS = 4.5 V, ID = 50 A 2
Forward Diode Voltage VSD 0.75 1.2 V VGS = 0 V, IS = 50 A, TJ = 25°C 2
Drain-to-Source Voltage VDSS 40 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (RθJC, steady state) ID 313 A RθJC (Note 2), steady state, TC = 25°C 1
Power Dissipation (RθJC) PD 167 W RθJC (Note 2) 1
Continuous Drain Current (RθJA, steady state) ID 49.5 A RθJA (Note 1, 2), steady state, TA = 25°C 1
Power Dissipation (RθJA) PD 3.8 W RθJA (Note 1, 2) 1
Pulsed Drain Current IDM 900 A TA = 25°C, tp = 10 µs 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Source Current (Body Diode) IS 169 A 1
Single Pulse Drain-to-Source Avalanche Energy EAS 706 mJ IL(pk) = 29 A 1
Lead Temperature Soldering Reflow TL 300 °C 1/8 in from case for 10 s 1
Junction-to-Case Thermal Resistance, Steady State RθJC 0.9 °C/W Steady state (Note 3) 2
Junction-to-Ambient Thermal Resistance, Steady State RθJA 39 °C/W Steady state (Note 3) 2

CAD (KiCad official)

  • Symbol: NTMFSC0D9N04CL
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5.1x6.2) (KiCad packages3D, STEP)
  • 3D model files: ntmfsc0d9n04cl-etched.step / ntmfsc0d9n04cl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntmfsc0d9n04cl.step / ntmfsc0d9n04cl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 9054954c14be44e4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF