# NTMFS4821N-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

NTMFS4821N-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; VGS is rated ±20V and the gate threshold is 1.0 to 2.5V at ID=250μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current ID@TC=25℃ | ID |  |  | 80 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current ID@TC=70℃ | ID |  |  | 45 | A | VGS @ 10V, TC=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 280 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 56 | mJ |  | 1 |
| Total Power Dissipation | PD |  |  | 37 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  | 30 |  | ℃/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 0.1 | μA | VDS=30V,VGS=0V | 2 |
| Zero Gate Voltage Drain Current (Tj=125℃) | IDSS |  |  | 100 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 6 |  | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 5.4 | 8 | mΩ | VGS=4.5V, ID=16A | 2 |
| Input Capacitance | Ciss |  | 1930 |  | pF | VDS=15V,VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 310 |  | pF | VDS=15V,VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 260 |  | pF | VDS=15V,VGS=0V, f=1MHz | 2 |
| Gate Resistance | Rg |  | 0.85 |  | Ω | f=1MHz | 2 |
| Total Gate Charge | Qg |  | 38 |  | nC | VDS=15V,ID=20A, VGS=10V | 2 |
| Gate-Source Charge | Qgs |  | 5.1 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 12 |  | nC |  | 2 |
| Turn-on Delay Time | td(on) |  | 8.5 |  | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 |
| Turn-on Rise Time | tr |  | 9 |  | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 |
| Turn-Off Delay Time | td(off) |  | 31 |  | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 |
| Turn-Off Fall Time | tf |  | 9 |  | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 |
| Forward on voltage | VSD |  | 0.8 | 1.2 | V | ISD=20A,VGS=0V | 2 |
| Reverse Recovery Time | trr |  | 16 |  | nS | Tj=25℃,Isd=20A, VGS=0V, di/dt=500A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 42 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `NTMFS4821N-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `ntmfs4821n-hxy-etched.step` / `ntmfs4821n-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntmfs4821n-hxy.step` / `ntmfs4821n-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/ntmfs4821n-hxy-datasheet.pdf) (6 pp, sha256 `c69bc172d9f4677c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntmfs4821n-hxy-datasheet.pdf)