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NTMFS4821N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTMFS4821N-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
NTMFS4821N-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives VDS 30V and VGS ±20V maximum ratings. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; VGS is rated ±20V and the gate threshold is 1.0 to 2.5V at ID=250μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; VDS is rated 30V and ID is 80A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current ID@TC=25℃ | ID | 80 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current ID@TC=70℃ | ID | 45 | A | VGS @ 10V, TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | 1 | |||
| Total Power Dissipation | PD | 37 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 30 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.1 | μA | VDS=30V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tj=125℃) | IDSS | 100 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 6 | mΩ | VGS=10V, ID=20A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 5.4 | 8 | mΩ | VGS=4.5V, ID=16A | 2 | |
| Input Capacitance | Ciss | 1930 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 310 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 260 | pF | VDS=15V,VGS=0V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 0.85 | Ω | f=1MHz | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VDS=15V,ID=20A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 5.1 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 12 | nC | 2 | |||
| Turn-on Delay Time | td(on) | 8.5 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 9 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-Off Delay Time | td(off) | 31 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Turn-Off Fall Time | tf | 9 | nS | VDD=15V, ID=20A, RG=3, VGS=10V | 2 | ||
| Forward on voltage | VSD | 0.8 | 1.2 | V | ISD=20A,VGS=0V | 2 | |
| Reverse Recovery Time | trr | 16 | nS | Tj=25℃,Isd=20A, VGS=0V, di/dt=500A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 42 | nC | 2 |
CAD (KiCad official)
- Symbol:
NTMFS4821N-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
ntmfs4821n-hxy-etched.step/ntmfs4821n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmfs4821n-hxy.step/ntmfs4821n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
c69bc172d9f4677c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).