component
NTK3134NT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| ntk3134nt1g-etched.glb | 7d ago |
| ntk3134nt1g-etched.step | 7d ago |
| ntk3134nt1g-hero.glb | 7d ago |
| ntk3134nt1g-hero.overlay.json | 7d ago |
| ntk3134nt1g.glb | 7d ago |
| ntk3134nt1g.kicad_mod | 7d ago |
| ntk3134nt1g.kicad_sym | 7d ago |
| ntk3134nt1g.lbr | 7d ago |
| ntk3134nt1g.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
NTK3134NT1G
onsemi · MOSFETs · SOT-723
NTK3134NT1G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal, with the gate-to-source voltage limited to ±6 V in the Maximum Ratings. |
| 2 | Source | passive | MOSFET source terminal, the reference for the 20 V drain-to-source rating and the ±6 V gate-to-source rating. |
| 3 | Drain | passive | MOSFET drain terminal, rated for 20 V drain-to-source and up to 890 mA continuous drain current at TA = 25°C (steady state). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Continuous Drain Current | ID | 890 | mA | Steady state, TA = 25°C (Note 1) | 1 | ||
| Continuous Drain Current | ID | 640 | mA | Steady state, TA = 85°C (Note 1) | 1 | ||
| Continuous Drain Current | ID | 990 | mA | t ≤ 5 s, TA = 25°C (Note 1) | 1 | ||
| Continuous Drain Current | ID | 750 | mA | Steady state, TA = 25°C (Note 2) | 1 | ||
| Continuous Drain Current | ID | 540 | mA | Steady state, TA = 85°C (Note 2) | 1 | ||
| Power Dissipation | PD | 450 | mW | Steady state, TA = 25°C (Note 1) | 1 | ||
| Power Dissipation | PD | 550 | mW | t ≤ 5 s (Note 1) | 1 | ||
| Power Dissipation | PD | 310 | mW | TA = 25°C (Note 2) | 1 | ||
| Pulsed Drain Current | IDM | 1.8 | A | tp = 10 s | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient Steady State | RJA | 280 | °C/W | Steady state (Note 3) | 2 | ||
| Junction-to-Ambient t = 5 s | RJA | 228 | °C/W | t = 5 s (Note 3) | 2 | ||
| Junction-to-Ambient Steady State Minimum Pad | RJA | 400 | °C/W | Steady state, minimum pad (Note 4) | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VGS = 0 V, VDS = 16 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 2 | A | VGS = 0 V, VDS = 16 V, TJ = 125°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -0.5 | 0.5 | A | VDS = 0 V, VGS = ±4.5 V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.45 | 1.2 | V | VGS = VDS, ID = 250 µA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.2 | 0.35 | Ω | VGS = 4.5 V, ID = 890 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.26 | 0.45 | Ω | VGS = 2.5 V, ID = 780 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.43 | 0.65 | Ω | VGS = 1.8 V, ID = 700 mA | 2 | |
| Drain-to-Source On Resistance | RDS(on) | 0.56 | 1.2 | Ω | VGS = 1.5 V, ID = 200 mA | 2 | |
| Input Capacitance | CISS | 79 | 120 | pF | VGS = 0 V, f = 1 MHz, VDS = 16 V | 2 | |
| Output Capacitance | COSS | 13 | 20 | pF | VGS = 0 V, f = 1 MHz, VDS = 16 V | 2 | |
| Reverse Transfer Capacitance | CRSS | 9 | 15 | pF | VGS = 0 V, f = 1 MHz, VDS = 16 V | 2 | |
| Forward Diode Voltage | VSD | 0.75 | 1.2 | V | VGS = 0 V, IS = 350 mA, TJ = 25°C | 2 |
CAD (KiCad official)
- Symbol:
NTK3134NT1G - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
ntk3134nt1g-etched.step/ntk3134nt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntk3134nt1g.step/ntk3134nt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
c2f7d1d297206c44, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).