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Contents

README

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NTK3134NT1G

onsemi · MOSFETs · SOT-723

NTK3134NT1G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal, with the gate-to-source voltage limited to ±6 V in the Maximum Ratings.
2 Source passive MOSFET source terminal, the reference for the 20 V drain-to-source rating and the ±6 V gate-to-source rating.
3 Drain passive MOSFET drain terminal, rated for 20 V drain-to-source and up to 890 mA continuous drain current at TA = 25°C (steady state).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 20 V 1
Gate-to-Source Voltage VGS -6 6 V 1
Continuous Drain Current ID 890 mA Steady state, TA = 25°C (Note 1) 1
Continuous Drain Current ID 640 mA Steady state, TA = 85°C (Note 1) 1
Continuous Drain Current ID 990 mA t ≤ 5 s, TA = 25°C (Note 1) 1
Continuous Drain Current ID 750 mA Steady state, TA = 25°C (Note 2) 1
Continuous Drain Current ID 540 mA Steady state, TA = 85°C (Note 2) 1
Power Dissipation PD 450 mW Steady state, TA = 25°C (Note 1) 1
Power Dissipation PD 550 mW t ≤ 5 s (Note 1) 1
Power Dissipation PD 310 mW TA = 25°C (Note 2) 1
Pulsed Drain Current IDM 1.8 A tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Steady State RJA 280 °C/W Steady state (Note 3) 2
Junction-to-Ambient t = 5 s RJA 228 °C/W t = 5 s (Note 3) 2
Junction-to-Ambient Steady State Minimum Pad RJA 400 °C/W Steady state, minimum pad (Note 4) 2
Drain-to-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 16 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 2 A VGS = 0 V, VDS = 16 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS -0.5 0.5 A VDS = 0 V, VGS = ±4.5 V 2
Gate Threshold Voltage VGS(TH) 0.45 1.2 V VGS = VDS, ID = 250 µA 2
Drain-to-Source On Resistance RDS(on) 0.2 0.35 Ω VGS = 4.5 V, ID = 890 mA 2
Drain-to-Source On Resistance RDS(on) 0.26 0.45 Ω VGS = 2.5 V, ID = 780 mA 2
Drain-to-Source On Resistance RDS(on) 0.43 0.65 Ω VGS = 1.8 V, ID = 700 mA 2
Drain-to-Source On Resistance RDS(on) 0.56 1.2 Ω VGS = 1.5 V, ID = 200 mA 2
Input Capacitance CISS 79 120 pF VGS = 0 V, f = 1 MHz, VDS = 16 V 2
Output Capacitance COSS 13 20 pF VGS = 0 V, f = 1 MHz, VDS = 16 V 2
Reverse Transfer Capacitance CRSS 9 15 pF VGS = 0 V, f = 1 MHz, VDS = 16 V 2
Forward Diode Voltage VSD 0.75 1.2 V VGS = 0 V, IS = 350 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: NTK3134NT1G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: ntk3134nt1g-etched.step / ntk3134nt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntk3134nt1g.step / ntk3134nt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 c2f7d1d297206c44, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF