# NTK3043NT5G

**onsemi** · MOSFETs · SOT-723

NTK3043NT5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±10 V (VGS). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; source (body diode) current is rated 286 mA (IS, Note 2). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 20 V (VDSS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 20 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 255 | mA | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 185 | mA | Steady state, TA = 85°C | 1 |
| Continuous Drain Current (Note 1) | ID |  |  | 285 | mA | t 5 s, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID |  |  | 210 | mA | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID |  |  | 155 | mA | Steady state, TA = 85°C | 1 |
| Power Dissipation (Note 1) | PD |  |  | 440 | mW | Steady state, TA = 25°C | 1 |
| Power Dissipation (Note 1) | PD |  |  | 545 | mW | t 5 s, TA = 25°C | 1 |
| Power Dissipation (Note 2) | PD |  |  | 310 | mW | TA = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 400 | mA | tp = 10 s | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Source Current (Body Diode) (Note 2) | IS |  |  | 286 | mA |  | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 | °C | 1/8 in from case for 10 seconds | 1 |
| Junction-to-Ambient, Steady State (Note 3) | RJA |  |  | 280 | °C/W | Surface-mounted on FR4, 1 in sq pad | 2 |
| Junction-to-Ambient, t = 5 s (Note 3) | RJA |  |  | 228 | °C/W | t = 5 s, 1 in sq pad | 2 |
| Junction-to-Ambient, Steady State Minimum Pad (Note 4) | RJA |  |  | 400 | °C/W | Steady state, minimum recommended pad | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS = 0 V, ID = 100 A | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | A | VGS = 0 V, VDS = 16 V, TJ = 25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | A | VGS = 0 V, VDS = 16 V, TJ = 125°C | 2 |
| Gate-to-Source Leakage Current | IGSS |  |  | 1 | A | VDS = 0 V, VGS = ±5 V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.4 |  | 1.3 | V | VGS = VDS, ID = 250 A | 2 |
| Drain-to-Source On Resistance | RDS(ON) |  | 1.5 | 3.4 |  | VGS = 4.5 V, ID = 10 mA | 2 |
| Drain-to-Source On Resistance | RDS(ON) |  | 1.6 | 3.8 |  | VGS = 4.5 V, ID = 255 mA | 2 |
| Drain-to-Source On Resistance | RDS(ON) |  | 2.4 | 4.5 |  | VGS = 2.5 V, ID = 1 mA | 2 |
| Drain-to-Source On Resistance | RDS(ON) |  | 5.1 | 10 |  | VGS = 1.8 V, ID = 1 mA | 2 |
| Drain-to-Source On Resistance | RDS(ON) |  | 6.8 | 15 |  | VGS = 1.65 V, ID = 1 mA | 2 |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ |  | 27 |  | mV/°C | ID = 100 A, Reference to 25°C | 2 |
| Gate Threshold Temperature Coefficient | VGS(TH)/TJ |  | -2.4 |  | mV/°C |  | 2 |
| Forward Transconductance | gFS |  | 0.275 |  | S | VDS = 5 V, ID = 100 mA | 2 |
| Gate Resistance | RG |  | 2.2 |  | k | TA = 25°C | 2 |
| Input Capacitance | CISS |  | 11 |  | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | 2 |
| Output Capacitance | COSS |  | 8.3 |  | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | 2 |
| Reverse Transfer Capacitance | CRSS |  | 2.7 |  | pF | VGS = 0 V, f = 1 MHz, VDS = 10 V | 2 |
| Turn-On Delay Time | td(ON) |  | 13 |  | ns | VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | 2 |
| Rise Time | tr |  | 15 |  | ns | VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | 2 |
| Turn-Off Delay Time | td(OFF) |  | 94 |  | ns | VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | 2 |
| Fall Time | tf |  | 55 |  | ns | VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 | 2 |
| Forward Diode Voltage | VSD |  | 0.83 | 1.2 | V | VGS = 0 V, IS = 286 mA, TJ = 25°C | 2 |
| Forward Diode Voltage | VSD |  | 0.69 |  | V | VGS = 0 V, IS = 286 mA, TJ = 125°C | 2 |
| Reverse Recovery Time | tRR |  | 9.1 |  | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | 2 |
| Charge Time | ta |  | 7.1 |  | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | 2 |
| Discharge Time | tb |  | 2 |  | ns | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | 2 |
| Reverse Recovery Charge | QRR |  | 3.7 |  | nC | VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA | 2 |

## CAD (KiCad official)

- Symbol: `NTK3043NT5G`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files: `ntk3043nt5g-etched.step` / `ntk3043nt5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntk3043nt5g.step` / `ntk3043nt5g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/ntk3043nt5-d.pdf) (6 pp, sha256 `a22dd48b0f64197d`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntk3043nt5g-datasheet.pdf)