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NTK3043NT5G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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NTK3043NT5G

onsemi · MOSFETs · SOT-723

NTK3043NT5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±10 V (VGS).
2 Source passive Source terminal of the N-channel MOSFET; source (body diode) current is rated 286 mA (IS, Note 2).
3 Drain passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 20 V (VDSS).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 20 V 1
Gate-to-Source Voltage VGS -10 10 V 1
Continuous Drain Current (Note 1) ID 255 mA Steady state, TA = 25°C 1
Continuous Drain Current (Note 1) ID 185 mA Steady state, TA = 85°C 1
Continuous Drain Current (Note 1) ID 285 mA t 5 s, TA = 25°C 1
Continuous Drain Current (Note 2) ID 210 mA Steady state, TA = 25°C 1
Continuous Drain Current (Note 2) ID 155 mA Steady state, TA = 85°C 1
Power Dissipation (Note 1) PD 440 mW Steady state, TA = 25°C 1
Power Dissipation (Note 1) PD 545 mW t 5 s, TA = 25°C 1
Power Dissipation (Note 2) PD 310 mW TA = 25°C 1
Pulsed Drain Current IDM 400 mA tp = 10 s 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) (Note 2) IS 286 mA 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 seconds 1
Junction-to-Ambient, Steady State (Note 3) RJA 280 °C/W Surface-mounted on FR4, 1 in sq pad 2
Junction-to-Ambient, t = 5 s (Note 3) RJA 228 °C/W t = 5 s, 1 in sq pad 2
Junction-to-Ambient, Steady State Minimum Pad (Note 4) RJA 400 °C/W Steady state, minimum recommended pad 2
Drain-to-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 100 A 2
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 16 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 10 A VGS = 0 V, VDS = 16 V, TJ = 125°C 2
Gate-to-Source Leakage Current IGSS 1 A VDS = 0 V, VGS = ±5 V 2
Gate Threshold Voltage VGS(TH) 0.4 1.3 V VGS = VDS, ID = 250 A 2
Drain-to-Source On Resistance RDS(ON) 1.5 3.4 VGS = 4.5 V, ID = 10 mA 2
Drain-to-Source On Resistance RDS(ON) 1.6 3.8 VGS = 4.5 V, ID = 255 mA 2
Drain-to-Source On Resistance RDS(ON) 2.4 4.5 VGS = 2.5 V, ID = 1 mA 2
Drain-to-Source On Resistance RDS(ON) 5.1 10 VGS = 1.8 V, ID = 1 mA 2
Drain-to-Source On Resistance RDS(ON) 6.8 15 VGS = 1.65 V, ID = 1 mA 2
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 27 mV/°C ID = 100 A, Reference to 25°C 2
Gate Threshold Temperature Coefficient VGS(TH)/TJ -2.4 mV/°C 2
Forward Transconductance gFS 0.275 S VDS = 5 V, ID = 100 mA 2
Gate Resistance RG 2.2 k TA = 25°C 2
Input Capacitance CISS 11 pF VGS = 0 V, f = 1 MHz, VDS = 10 V 2
Output Capacitance COSS 8.3 pF VGS = 0 V, f = 1 MHz, VDS = 10 V 2
Reverse Transfer Capacitance CRSS 2.7 pF VGS = 0 V, f = 1 MHz, VDS = 10 V 2
Turn-On Delay Time td(ON) 13 ns VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 2
Rise Time tr 15 ns VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 2
Turn-Off Delay Time td(OFF) 94 ns VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 2
Fall Time tf 55 ns VGS = 4.5 V, VDD = 5 V, ID = 10 mA, RG = 6 2
Forward Diode Voltage VSD 0.83 1.2 V VGS = 0 V, IS = 286 mA, TJ = 25°C 2
Forward Diode Voltage VSD 0.69 V VGS = 0 V, IS = 286 mA, TJ = 125°C 2
Reverse Recovery Time tRR 9.1 ns VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA 2
Charge Time ta 7.1 ns VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA 2
Discharge Time tb 2 ns VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA 2
Reverse Recovery Charge QRR 3.7 nC VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/s, IS = 286 mA 2

CAD (KiCad official)

  • Symbol: NTK3043NT5G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723 (KiCad packages3D, STEP)
  • 3D model files: ntk3043nt5g-etched.step / ntk3043nt5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntk3043nt5g.step / ntk3043nt5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 a22dd48b0f64197d, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF