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NTHL125N65S3H

onsemi · MOSFETs · TO-247

NTHL125N65S3H from onsemi, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with gate threshold VGS(th) of 2.4 V to 4.0 V and an absolute maximum VGSS of ±30 V.
2 D passive Drain; also connected to the mounting tab, with maximum drain-to-source voltage VDSS of 650 V and continuous drain current of 24 A at TC = 25°C.
3 S passive Source; the power return of the N-channel MOSFET, with body diode continuous forward current IS of 24 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 650 V 3
Gate to Source Voltage - DC VGSS -30 30 V DC 3
Gate to Source Voltage - AC VGSS -30 30 V AC (f > 1 Hz) 3
Drain Current - Continuous ID 24 A TC = 25°C 3
Drain Current - Continuous ID 15 A TC = 100°C 3
Drain Current - Pulsed IDM 67 A Note 1 (repetitive, pulse width limited by max junction temperature) 3
Single Pulsed Avalanche Energy EAS 216 mJ Note 2: IAS = 4.7 A, RG = 25, starting TJ = 25°C 3
Avalanche Current IAS 4.7 A Note 2: RG = 25, starting TJ = 25°C 3
Repetitive Avalanche Energy EAR 1.71 mJ Note 1 3
MOSFET dv/dt dv/dt 120 V/ns 3
Peak Diode Recovery dv/dt dv/dt 20 V/ns Note 3: ISD ≤ 12 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C 3
Power Dissipation PD 171 W TC = 25°C 3
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 3
Maximum Lead Temperature for Soldering TL 260 °C 1/8 inch from case for 5 seconds 3
Thermal Resistance, Junction to Case, Max. RJC 0.73 °C/W 3
Thermal Resistance, Junction to Ambient, Max. RJA 40 °C/W 3
Drain to Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 1 mA, TJ = 25°C 4
Drain to Source Breakdown Voltage BVDSS 700 V VGS = 0 V, ID = 1 mA, TJ = 150°C 4
Zero Gate Voltage Drain Current IDSS 1 A VDS = 650 V, VGS = 0 V 4
Gate to Body Leakage Current IGSS -100 100 nA VGS = ±30 V, VDS = 0 V 4
Gate Threshold Voltage VGS(th) 2.4 4 V VGS = VDS, ID = 2.1 mA 4
Static Drain to Source On Resistance RDS(on) 125 m VGS = 10 V, ID = 12 A 4
Maximum Continuous Source to Drain Diode Forward Current IS 24 A 4
Maximum Pulsed Source to Drain Diode Forward Current ISM 67 A 4
Source to Drain Diode Forward Voltage VSD 1.2 V VGS = 0 V, ISD = 12 A 4

CAD (KiCad official)

  • Symbol: NTHL125N65S3H
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: nthl125n65s3h-etched.step / nthl125n65s3h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nthl125n65s3h.step / nthl125n65s3h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 6f72ea8465cab805, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF