NTHL125N65S3H from onsemi, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; controls the channel, with gate threshold VGS(th) of 2.4 V to 4.0 V and an absolute maximum VGSS of ±30 V.
2	D	passive	Drain; also connected to the mounting tab, with maximum drain-to-source voltage VDSS of 650 V and continuous drain current of 24 A at TC = 25°C.
3	S	passive	Source; the power return of the N-channel MOSFET, with body diode continuous forward current IS of 24 A.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-247
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Drain to Source Voltage	VDSS		650	V		3
Gate to Source Voltage - DC	VGSS	-30	30	V	DC	3
Gate to Source Voltage - AC	VGSS	-30	30	V	AC (f > 1 Hz)	3
Drain Current - Continuous	ID		24	A	TC = 25°C	3
Drain Current - Continuous	ID		15	A	TC = 100°C	3
Drain Current - Pulsed	IDM		67	A	Note 1 (repetitive, pulse width limited by max junction temperature)	3
Single Pulsed Avalanche Energy	EAS		216	mJ	Note 2: IAS = 4.7 A, RG = 25, starting TJ = 25°C	3
Avalanche Current	IAS		4.7	A	Note 2: RG = 25, starting TJ = 25°C	3
Repetitive Avalanche Energy	EAR		1.71	mJ	Note 1	3
MOSFET dv/dt	dv/dt		120	V/ns		3
Peak Diode Recovery dv/dt	dv/dt		20	V/ns	Note 3: ISD ≤ 12 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C	3
Power Dissipation	PD		171	W	TC = 25°C	3
Operating and Storage Temperature Range	TJ, TSTG	-55	150	°C		3
Maximum Lead Temperature for Soldering	TL		260	°C	1/8 inch from case for 5 seconds	3
Thermal Resistance, Junction to Case, Max.	RJC		0.73	°C/W		3
Thermal Resistance, Junction to Ambient, Max.	RJA		40	°C/W		3
Drain to Source Breakdown Voltage	BVDSS	650		V	VGS = 0 V, ID = 1 mA, TJ = 25°C	4
Drain to Source Breakdown Voltage	BVDSS	700		V	VGS = 0 V, ID = 1 mA, TJ = 150°C	4
Zero Gate Voltage Drain Current	IDSS		1	A	VDS = 650 V, VGS = 0 V	4
Gate to Body Leakage Current	IGSS	-100	100	nA	VGS = ±30 V, VDS = 0 V	4
Gate Threshold Voltage	VGS(th)	2.4	4	V	VGS = VDS, ID = 2.1 mA	4
Static Drain to Source On Resistance	RDS(on)		125	m	VGS = 10 V, ID = 12 A	4
Maximum Continuous Source to Drain Diode Forward Current	IS		24	A		4
Maximum Pulsed Source to Drain Diode Forward Current	ISM		67	A		4
Source to Drain Diode Forward Voltage	VSD		1.2	V	VGS = 0 V, ISD = 12 A	4

CAD (KiCad official)

Symbol: NTHL125N65S3H
Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
3D model: TO-247 (KiCad packages3D, STEP)
3D model files: nthl125n65s3h-etched.step / nthl125n65s3h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nthl125n65s3h.step / nthl125n65s3h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (11 pp, sha256 6f72ea8465cab805, retrieved 2026-11-07, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

NTHL125N65S3H

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3D Model

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Schematic Symbol

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Datasheet

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