component
NTH4L060N090SC1
Public Made by Adomby adom
onsemi MOSFETs, TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| nth4l060n090sc1-etched.step | 8d ago |
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NTH4L060N090SC1
onsemi · MOSFETs · TO-247-4L
NTH4L060N090SC1 from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the 900 V N-channel SiC MOSFET, rated for 46 A continuous at TC = 25°C, also connected to the package tab. |
| 2 | S2 | passive | Power Source, which carries the main drain current (46 A at TC = 25°C) and is the power-loop return. |
| 3 | S1 | passive | Kelvin Source, the gate-drive return reference; recommended VGS is -5/+15 V and the absolute maximum is +22/-8 V. |
| 4 | G | input | Gate input with a threshold of 1.8 to 4.3 V at ID = 5 mA, a recommended drive of -5/+15 V and an absolute maximum of +22/-8 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 900 | V | 2 | |||
| Gate-to-Source Voltage | VGS | -8 | 22 | V | 2 | ||
| Recommended Gate-to-Source Operating Voltage | VGSop | -5 | 15 | V | TC < 175°C | 2 | |
| Continuous Drain Current | ID | 46 | A | Steady state, TC = 25°C | 2 | ||
| Power Dissipation | PD | 221 | W | 2 | |||
| Continuous Drain Current | ID | 32 | A | Steady state, TC = 100°C | 2 | ||
| Power Dissipation | PD | 110 | W | 2 | |||
| Pulsed Drain Current | IDM | 211 | A | TA = 25°C (Note 2) | 2 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 2 | ||
| Source Current (Body Diode) | IS | 22 | A | 2 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 162 | mJ | IL(pk) = 18 A, L = 1 mH (Note 3) | 2 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.68 | °C/W | Note 1 | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W | Note 1 | 2 | ||
| Drain-to-Source On Resistance | RDS(on) | 60 | 84 | mΩ | VGS = 15 V, ID = 20 A, TJ = 25°C | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.7 | 4.3 | V | VGS = VDS, ID = 5 mA | 3 |
| Gate-to-Source Leakage Current | IGSS | -1 | 1 | µA | VGS = +22/−8 V, VDS = 0 V | 3 | |
| Turn-On Delay Time | td(on) | 17 | 31 | ns | VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load | 3 | |
| Rise Time | tr | 15 | 27 | ns | VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load | 3 | |
| Turn-Off Delay Time | td(off) | 29 | 47 | ns | VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load | 3 | |
| Fall Time | tf | 11 | 20 | ns | VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load | 3 |
CAD (KiCad official)
- Symbol:
NTH4L060N090SC1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
nth4l060n090sc1-etched.step/nth4l060n090sc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nth4l060n090sc1.step/nth4l060n090sc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
dcf872c6b255d0b3, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).