NTH4L060N090SC1 from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D	passive	Drain of the 900 V N-channel SiC MOSFET, rated for 46 A continuous at TC = 25°C, also connected to the package tab.
2	S2	passive	Power Source, which carries the main drain current (46 A at TC = 25°C) and is the power-loop return.
3	S1	passive	Kelvin Source, the gate-drive return reference; recommended VGS is -5/+15 V and the absolute maximum is +22/-8 V.
4	G	input	Gate input with a threshold of 1.8 to 4.3 V at ID = 5 mA, a recommended drive of -5/+15 V and an absolute maximum of +22/-8 V.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-247-4L
Category	Triode/MOS Tube/Transistor
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Voltage	VDSS			900	V		2
Gate-to-Source Voltage	VGS	-8		22	V		2
Recommended Gate-to-Source Operating Voltage	VGSop	-5		15	V	TC < 175°C	2
Continuous Drain Current	ID			46	A	Steady state, TC = 25°C	2
Power Dissipation	PD			221	W		2
Continuous Drain Current	ID			32	A	Steady state, TC = 100°C	2
Power Dissipation	PD			110	W		2
Pulsed Drain Current	IDM			211	A	TA = 25°C (Note 2)	2
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		2
Source Current (Body Diode)	IS			22	A		2
Single Pulse Drain-to-Source Avalanche Energy	EAS			162	mJ	IL(pk) = 18 A, L = 1 mH (Note 3)	2
Junction-to-Case Thermal Resistance	RθJC			0.68	°C/W	Note 1	2
Junction-to-Ambient Thermal Resistance	RθJA			40	°C/W	Note 1	2
Drain-to-Source On Resistance	RDS(on)		60	84	mΩ	VGS = 15 V, ID = 20 A, TJ = 25°C	3
Gate Threshold Voltage	VGS(th)	1.8	2.7	4.3	V	VGS = VDS, ID = 5 mA	3
Gate-to-Source Leakage Current	IGSS	-1		1	µA	VGS = +22/−8 V, VDS = 0 V	3
Turn-On Delay Time	td(on)		17	31	ns	VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load	3
Rise Time	tr		15	27	ns	VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load	3
Turn-Off Delay Time	td(off)		29	47	ns	VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load	3
Fall Time	tf		11	20	ns	VGS = −5/15 V, VDS = 720 V, ID = 20 A, RG = 2.5 Ω, Inductive Load	3

CAD (KiCad official)

Symbol: NTH4L060N090SC1
Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
3D model: TO-247-4L (KiCad packages3D, STEP)
3D model files: nth4l060n090sc1-etched.step / nth4l060n090sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nth4l060n090sc1.step / nth4l060n090sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (8 pp, sha256 dcf872c6b255d0b3, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

NTH4L060N090SC1

Verified NTH4L060N090SC1

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README