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NTH4L025N065SC1

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onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesnth4l025n065sc1factory-2.0.0extractor-text

Verified NTH4L025N065SC1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 4 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NTH4L025N065SC1 · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 8-page datasheet
  • ✓distributor: lcsc C5209034, digikey 5556-NTH4L025N065SC1-ND, mouser 863-NTH4L025N065SC1
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-0k_nz3oq/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nth4l025n065sc1.kicad_sym✓ nth4l025n065sc1.kicad_mod✓ nth4l025n065sc1.step
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Ray Publish 0.1.0 e30a508 5d ago

NTH4L025N065SC1

onsemi · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

NTH4L025N065SC1 from onsemi, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel SiC MOSFET, rated 650 V drain-to-source (VDSS) and 99 A continuous at TC = 25°C.
2 S2 passive Power Source, the main source current path, with body-diode source current rated 75 A.
3 S1 passive Kelvin Source, the source sense connection for the gate drive return.
4 G input Gate, with an absolute maximum of -8/+22 V and a recommended operating range of -5/+18 V relative to source.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0 V, ID = 1 mA 2
Zero Gate Voltage Drain Current IDSS 10 µA VGS = 0 V, VDS = 650 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 1 mA VGS = 0 V, VDS = 650 V, TJ = 175°C 2
Gate-to-Source Leakage Current IGSS 250 nA VGS = +18/-5 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 1.8 2.8 4.3 V VGS = VDS, ID = 15.5 mA 2
Recommended Gate Voltage VGOP -5 18 V 2
Drain-to-Source On Resistance RDS(on) 19 28.5 mΩ VGS = 18 V, ID = 45 A, TJ = 25°C 2
Continuous Drain-Source Diode Forward Current ISD 75 A VGS = -5 V, TJ = 25°C 2
Pulsed Drain-Source Diode Forward Current ISDM 323 A VGS = -5 V, TJ = 25°C 2
Drain-to-Source Voltage VDSS 650 V TJ = 25°C 1
Gate-to-Source Voltage VGS -8 22 V TJ = 25°C 1
Recommended Gate-to-Source Voltage VGSop -5 18 V TC < 175°C 1
Continuous Drain Current ID 99 A Steady State, TC = 25°C 1
Power Dissipation PD 348 W TC = 25°C 1
Continuous Drain Current ID 70 A Steady State, TC = 100°C 1
Power Dissipation PD 174 W TC = 100°C 1
Pulsed Drain Current IDM 323 A TC = 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Source Current (Body Diode) IS 75 A 1
Single Pulse Drain-to-Source Avalanche Energy EAS 62 mJ IL(pk) = 11.2 A, L = 1 mH 1
Maximum Lead Temperature for Soldering TL 260 °C 1/8" from case for 5 s 1
Junction-to-Case Thermal Resistance RθJC 0.43 °C/W Steady State 2
Junction-to-Ambient Thermal Resistance RθJA 40 °C/W Steady State 2
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 0.15 V/°C ID = 20 mA, referenced to 25°C 2
Drain-to-Source On Resistance RDS(on) 25 mΩ VGS = 15 V, ID = 45 A, TJ = 25°C 2
Drain-to-Source On Resistance RDS(on) 24 mΩ VGS = 18 V, ID = 45 A, TJ = 175°C 2
Forward Transconductance gFS 27 S VDS = 10 V, ID = 45 A 2
Input Capacitance CISS 3480 pF VGS = 0 V, f = 1 MHz, VDS = 325 V 2
Output Capacitance COSS 278 pF VGS = 0 V, f = 1 MHz, VDS = 325 V 2
Reverse Transfer Capacitance CRSS 25 pF VGS = 0 V, f = 1 MHz, VDS = 325 V 2
Total Gate Charge QG(TOT) 164 nC VGS = -5/18 V, VDS = 520 V, ID = 45 A 2
Gate-to-Source Charge QGS 48 nC VGS = -5/18 V, VDS = 520 V, ID = 45 A 2
Gate-to-Drain Charge QGD 48 nC VGS = -5/18 V, VDS = 520 V, ID = 45 A 2
Gate Resistance RG 1.5 Ω f = 1 MHz 2
Turn-On Delay Time td(ON) 17 ns VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Rise Time tr 19 ns VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Turn-Off Delay Time td(OFF) 32 ns VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Fall Time tf 8 ns VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Turn-On Switching Loss EON 93 µJ VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Turn-Off Switching Loss EOFF 84 µJ VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Total Switching Loss Etot 177 µJ VGS = -5/18 V, VDS = 400 V, ID = 45 A, RG = 2.2 Ω, inductive load 2
Forward Diode Voltage VSD 4.7 V VGS = -5 V, ISD = 45 A, TJ = 25°C 2
Reverse Recovery Time tRR 25 ns VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3
Reverse Recovery Charge QRR 171 nC VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3
Reverse Recovery Energy EREC 15.8 µJ VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3
Peak Reverse Recovery Current IRRM 13.7 A VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3
Charge Time Ta 14.9 ns VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3
Discharge Time Tb 10.6 ns VGS = -5/18 V, ISD = 45 A, dIS/dt = 1000 A/µs 3

CAD (KiCad official)

  • Symbol: NTH4L025N065SC1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: nth4l025n065sc1-etched.step / nth4l025n065sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nth4l025n065sc1.step / nth4l025n065sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 5371a9c481a764be, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF