# NTGD4167CT1G

**onsemi** · MOSFETs · TSOP-6

NTGD4167CT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET; gate-to-source voltage is rated at ±12 V (VGS). |
| 2 | S2 | passive | Source of the P-channel MOSFET; the P-channel continuous drain current is rated −1.9 A (steady state) and −2.2 A (t ≤ 5 s). |
| 3 | G2 | input | Gate of the P-channel MOSFET; gate-to-source voltage is rated at ±12 V (VGS). |
| 4 | D2 | passive | Drain of the P-channel MOSFET; drain-to-source voltage is rated at −30 V (VDSS). |
| 5 | S1 | passive | Source of the N-channel MOSFET; the N-channel continuous drain current is rated 2.6 A (steady state) and 2.9 A (t ≤ 5 s). |
| 6 | D1 | passive | Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V (VDSS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 30 | V |  | 1 |
| Gate-to-Source Voltage (N-Ch & P-Ch) | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 2.6 | A | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 1.9 | A | Steady state, TA = 85°C | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 2.9 | A | t ≤ 5 s, TA = 25°C | 1 |
| Continuous Drain Current (P-Ch) | ID | -1.9 |  |  | A | Steady state, TA = 25°C | 1 |
| Continuous Drain Current (P-Ch) | ID | -1.4 |  |  | A | Steady state, TA = 85°C | 1 |
| Continuous Drain Current (P-Ch) | ID | -2.2 |  |  | A | t ≤ 5 s, TA = 25°C | 1 |
| Power Dissipation | PD |  |  | 0.9 | W | Steady state, TA = 25°C (Note 1) | 1 |
| Power Dissipation | PD |  |  | 1.1 | W | t ≤ 5 s, TA = 25°C (Note 1) | 1 |
| Pulsed Drain Current (N-Ch) | IDM |  |  | 8.6 | A | tp = 10 s | 1 |
| Pulsed Drain Current (P-Ch) | IDM | -6.3 |  |  | A |  | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Source Current (Body Diode) | IS | -0.9 |  | 0.9 | A |  | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Ambient Thermal Resistance | RJA |  |  | 140 | °C/W | Steady state (Note 1) | 1 |
| Junction-to-Ambient Thermal Resistance | RJA |  |  | 110 | °C/W | t ≤ 5 s (Note 1) | 1 |
| Drain-to-Source Breakdown Voltage (N-Ch) | V(BR)DSS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-to-Source Breakdown Voltage (P-Ch) | V(BR)DSS | -30 |  |  | V | VGS = 0 V, ID = -250 µA | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 24 V, TJ = 25 °C | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS |  |  | -1 | µA | VGS = 0 V, VDS = -24 V | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS |  |  | 10 | µA | VGS = 0 V, VDS = 24 V, TJ = 85 °C | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS |  |  | -10 | µA | VGS = 0 V, VDS = -24 V | 2 |
| Gate-to-Source Leakage Current (N-Ch) | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Gate-to-Source Leakage Current (P-Ch) | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(TH) | 0.5 | 0.9 | 1.5 | V | VGS = VDS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Ch) | VGS(TH) | -0.5 | -1.1 | -1.5 | V | VGS = VDS, ID = -250 µA | 2 |
| Drain-to-Source On Resistance (N-Ch) | RDS(on) |  | 52 | 90 | mΩ | VGS = 4.5 V, ID = 2.6 A | 2 |
| Drain-to-Source On Resistance (N-Ch) | RDS(on) |  | 67 | 125 | mΩ | VGS = 2.5 V, ID = 2.2 A | 2 |
| Drain-to-Source On Resistance (P-Ch) | RDS(on) |  | 130 | 170 | mΩ | VGS = -4.5 V, ID = -1.9 A | 2 |
| Drain-to-Source On Resistance (P-Ch) | RDS(on) |  | 202 | 300 | mΩ | VGS = -2.5 V, ID = -1.0 A | 2 |
| Total Gate Charge (N-Ch) | QG(TOT) |  | 3.7 | 5.5 | nC | VGS = 4.5 V, VDS = 15 V, ID = 2.0 A | 2 |
| Total Gate Charge (P-Ch) | QG(TOT) |  | 3.9 | 6 | nC | VGS = -4.5 V, VDS = -15 V, ID = -2.0 A | 2 |
| Forward Diode Voltage (N-Ch) | VSD |  | 0.7 | 1.2 | V | VGS = 0 V, TJ = 25 °C, IS = 0.9 A | 3 |
| Forward Diode Voltage (P-Ch) | VSD |  | -0.8 | -1.2 | V | IS = -0.9 A | 3 |

## CAD (KiCad official)

- Symbol: `NTGD4167CT1G`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `ntgd4167ct1g-etched.step` / `ntgd4167ct1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntgd4167ct1g.step` / `ntgd4167ct1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205164973789184) (10 pp, sha256 `1edaf4248567908c`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntgd4167ct1g-datasheet.pdf)