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NTGD4167CT1G

Public Made by Adom

by adom

onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTGD4167CT1G

onsemi · MOSFETs · TSOP-6

NTGD4167CT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET; gate-to-source voltage is rated at ±12 V (VGS).
2 S2 passive Source of the P-channel MOSFET; the P-channel continuous drain current is rated −1.9 A (steady state) and −2.2 A (t ≤ 5 s).
3 G2 input Gate of the P-channel MOSFET; gate-to-source voltage is rated at ±12 V (VGS).
4 D2 passive Drain of the P-channel MOSFET; drain-to-source voltage is rated at −30 V (VDSS).
5 S1 passive Source of the N-channel MOSFET; the N-channel continuous drain current is rated 2.6 A (steady state) and 2.9 A (t ≤ 5 s).
6 D1 passive Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V (VDSS).

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage (N-Ch & P-Ch) VGS -12 12 V 1
Continuous Drain Current (N-Ch) ID 2.6 A Steady state, TA = 25°C 1
Continuous Drain Current (N-Ch) ID 1.9 A Steady state, TA = 85°C 1
Continuous Drain Current (N-Ch) ID 2.9 A t ≤ 5 s, TA = 25°C 1
Continuous Drain Current (P-Ch) ID -1.9 A Steady state, TA = 25°C 1
Continuous Drain Current (P-Ch) ID -1.4 A Steady state, TA = 85°C 1
Continuous Drain Current (P-Ch) ID -2.2 A t ≤ 5 s, TA = 25°C 1
Power Dissipation PD 0.9 W Steady state, TA = 25°C (Note 1) 1
Power Dissipation PD 1.1 W t ≤ 5 s, TA = 25°C (Note 1) 1
Pulsed Drain Current (N-Ch) IDM 8.6 A tp = 10 s 1
Pulsed Drain Current (P-Ch) IDM -6.3 A 1
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS -0.9 0.9 A 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Junction-to-Ambient Thermal Resistance RJA 140 °C/W Steady state (Note 1) 1
Junction-to-Ambient Thermal Resistance RJA 110 °C/W t ≤ 5 s (Note 1) 1
Drain-to-Source Breakdown Voltage (N-Ch) V(BR)DSS 30 V VGS = 0 V, ID = 250 µA 2
Drain-to-Source Breakdown Voltage (P-Ch) V(BR)DSS -30 V VGS = 0 V, ID = -250 µA 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VGS = 0 V, VDS = 24 V, TJ = 25 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VGS = 0 V, VDS = -24 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VGS = 0 V, VDS = 24 V, TJ = 85 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VGS = 0 V, VDS = -24 V 2
Gate-to-Source Leakage Current (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-to-Source Leakage Current (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate Threshold Voltage (N-Ch) VGS(TH) 0.5 0.9 1.5 V VGS = VDS, ID = 250 µA 2
Gate Threshold Voltage (P-Ch) VGS(TH) -0.5 -1.1 -1.5 V VGS = VDS, ID = -250 µA 2
Drain-to-Source On Resistance (N-Ch) RDS(on) 52 90 mΩ VGS = 4.5 V, ID = 2.6 A 2
Drain-to-Source On Resistance (N-Ch) RDS(on) 67 125 mΩ VGS = 2.5 V, ID = 2.2 A 2
Drain-to-Source On Resistance (P-Ch) RDS(on) 130 170 mΩ VGS = -4.5 V, ID = -1.9 A 2
Drain-to-Source On Resistance (P-Ch) RDS(on) 202 300 mΩ VGS = -2.5 V, ID = -1.0 A 2
Total Gate Charge (N-Ch) QG(TOT) 3.7 5.5 nC VGS = 4.5 V, VDS = 15 V, ID = 2.0 A 2
Total Gate Charge (P-Ch) QG(TOT) 3.9 6 nC VGS = -4.5 V, VDS = -15 V, ID = -2.0 A 2
Forward Diode Voltage (N-Ch) VSD 0.7 1.2 V VGS = 0 V, TJ = 25 °C, IS = 0.9 A 3
Forward Diode Voltage (P-Ch) VSD -0.8 -1.2 V IS = -0.9 A 3

CAD (KiCad official)

  • Symbol: NTGD4167CT1G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgd4167ct1g-etched.step / ntgd4167ct1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgd4167ct1g.step / ntgd4167ct1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 1edaf4248567908c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF