# NTE194-HXY

**HXY MOSFET** · Bipolar (BJT) · TO-92

NTE194-HXY from HXY MOSFET, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of 6 V minimum at IE=10µA. |
| 2 | BASE | passive | Base terminal of the NPN transistor; base-emitter saturation voltage VBE(sat) is 1 V at IC=10mA, IB=1mA and at IC=50mA, IB=5mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; limits are VCEO 160 V, VCBO 180 V and IC 0.6 A, with PC 625 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 180 | V | Ta=25°C | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 160 | V | Ta=25°C | 1 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V | Ta=25°C | 1 |
| Collector Current | IC |  |  | 0.6 | A | Ta=25°C | 1 |
| Collector Power Dissipation | PC |  |  | 625 | mW | Ta=25°C | 1 |
| Thermal Resistance From Junction To Ambient | RJA |  |  | 200 | /W |  | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 |  |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 180 |  |  | V | IC=100μA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 160 |  |  | V | IC=1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10μA,IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 50 | nA | VCB=120V,IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 50 | nA | VEB=4V,IC=0 | 1 |
| DC current gain | hFE(1) | 80 |  |  |  | VCE=5V, IC=1mA | 1 |
| DC current gain | hFE(2) | 100 |  | 200 |  | VCE=5V, IC=10mA | 1 |
| DC current gain | hFE(3) | 50 |  |  |  | VCE=5V, IC=50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(1) |  |  | 0.15 | V | IC=10mA,IB=1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)(2) |  |  | 0.2 | V | IC=50mA,IB=5mA | 1 |
| Base-emitter saturation voltage | VBE(sat)(1) |  |  | 1 | V | IC=10mA,IB=1mA | 1 |
| Collector output capacitance | Cob |  |  | 6 | pF | VCB=10V,IE=0, f=1MHz | 1 |
| Emitter input capacitance | Cib |  |  | 20 | pF | VBE=0.5V,IC=0, f=1MHz | 1 |
| Transition frequency | fT | 100 |  | 300 | MHz | VCE=10V,IC=10mA, f=100MHz | 1 |

## CAD (KiCad official)

- Symbol: `NTE194-HXY`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `nte194-hxy-etched.step` / `nte194-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nte194-hxy.step` / `nte194-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604447402380718080) (4 pp, sha256 `c6b3fa8c2a04b1d7`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nte194-hxy-datasheet.pdf)